Abstract
The deformation behavior induced by Vickers indentation on (100) gallium arsenide single crystal has been investigated with high resolution electron microscopy. The results show that lots of microtwins, stacking-faults and heavy-distorted lattices were formed in indentation, and a crystalline-to-amorphous transition induced during indentation has been observed. It is possible that microtwins, stacking-faults and lattice-distortion is a middle process through which GaAs transforms from crystalline to amorphism.
| Original language | English |
|---|---|
| Pages (from-to) | X-340 |
| Journal | Jinshu Xuebao/Acta Metallurgica Sinica |
| Volume | 36 |
| Issue number | 4 |
| State | Published - Apr 2000 |
| Externally published | Yes |
Keywords
- Amorphization
- GaAs single crystal
- Indentation