Ambipolar organic light-emitting electrochemical transistor based on a heteroleptic charged iridium(III) complex

Ye Zhou; Suting Han; Guijiang Zhou; Wai Yeung Wong; V. A.L. Roy

doi:10.1063/1.4792842

Ambipolar organic light-emitting electrochemical transistor based on a heteroleptic charged iridium(III) complex

Ye Zhou
, Suting Han
, Guijiang Zhou
, Wai Yeung Wong
, V. A.L. Roy

School of Materials Science and Engineering

Xi'an Jiaotong University
City University of Hong Kong
Hong Kong Baptist University

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

High performance organic light-emitting electrochemical transistor (OLECT) based on a phosphorescent heteroleptic charged iridium(III) complex has been developed with low-cost solution processing technique. The new OLECT showed good ambipolar behavior with balanced hole and electron mobilities of 0.20 cm ² V^-1 s^-1 and 0.22 cm² V ^-1 s^-1, respectively. Furthermore, light emission has been observed from the OLECT device and modulated by the gate. All these results suggest that charged iridium(III) complexes could be a promising candidate for single-component multifunctional organic light-emitting field-effect transistor.

Original language	English
Article number	083301
Journal	Applied Physics Letters
Volume	102
Issue number	8
DOIs	https://doi.org/10.1063/1.4792842
State	Published - 25 Feb 2013

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@article{56fece0c315b4c90853b76870168e859,

title = "Ambipolar organic light-emitting electrochemical transistor based on a heteroleptic charged iridium(III) complex",

abstract = "High performance organic light-emitting electrochemical transistor (OLECT) based on a phosphorescent heteroleptic charged iridium(III) complex has been developed with low-cost solution processing technique. The new OLECT showed good ambipolar behavior with balanced hole and electron mobilities of 0.20 cm 2 V-1 s-1 and 0.22 cm2 V -1 s-1, respectively. Furthermore, light emission has been observed from the OLECT device and modulated by the gate. All these results suggest that charged iridium(III) complexes could be a promising candidate for single-component multifunctional organic light-emitting field-effect transistor.",

author = "Ye Zhou and Suting Han and Guijiang Zhou and Wong, \{Wai Yeung\} and Roy, \{V. A.L.\}",

year = "2013",

month = feb,

day = "25",

doi = "10.1063/1.4792842",

language = "英语",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Ambipolar organic light-emitting electrochemical transistor based on a heteroleptic charged iridium(III) complex

AU - Zhou, Ye

AU - Han, Suting

AU - Zhou, Guijiang

AU - Wong, Wai Yeung

AU - Roy, V. A.L.

PY - 2013/2/25

Y1 - 2013/2/25

N2 - High performance organic light-emitting electrochemical transistor (OLECT) based on a phosphorescent heteroleptic charged iridium(III) complex has been developed with low-cost solution processing technique. The new OLECT showed good ambipolar behavior with balanced hole and electron mobilities of 0.20 cm 2 V-1 s-1 and 0.22 cm2 V -1 s-1, respectively. Furthermore, light emission has been observed from the OLECT device and modulated by the gate. All these results suggest that charged iridium(III) complexes could be a promising candidate for single-component multifunctional organic light-emitting field-effect transistor.

AB - High performance organic light-emitting electrochemical transistor (OLECT) based on a phosphorescent heteroleptic charged iridium(III) complex has been developed with low-cost solution processing technique. The new OLECT showed good ambipolar behavior with balanced hole and electron mobilities of 0.20 cm 2 V-1 s-1 and 0.22 cm2 V -1 s-1, respectively. Furthermore, light emission has been observed from the OLECT device and modulated by the gate. All these results suggest that charged iridium(III) complexes could be a promising candidate for single-component multifunctional organic light-emitting field-effect transistor.

UR - https://www.scopus.com/pages/publications/84874828634

U2 - 10.1063/1.4792842

DO - 10.1063/1.4792842

M3 - 文章

AN - SCOPUS:84874828634

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083301

ER -

Ambipolar organic light-emitting electrochemical transistor based on a heteroleptic charged iridium(III) complex

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