Ag filament induced nonvolatile resistive switching memory behaviour in hexagonal MoSe2 nanosheets

Pengde Han; Bai Sun; Jia Li; Tianjing Li; Qingle Shi; Baoxiang Jiao; Qisheng Wu; Xuejiao Zhang

doi:10.1016/j.jcis.2017.05.082

Ag filament induced nonvolatile resistive switching memory behaviour in hexagonal MoSe₂ nanosheets

Pengde Han
, Bai Sun
, Jia Li
, Tianjing Li
, Qingle Shi
, Baoxiang Jiao
, Qisheng Wu
, Xuejiao Zhang

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

In this work, hexagonal MoSe₂ nanosheets were prepared by hydrothermal process. Next, the resistive switching memory behaviour of single MoSe₂ nanosheets was further investigated. We observed that MoSe₂ nanosheets based memory device show reproducible and stable bipolar resistive switching memory characteristics. Through the analysis for conductive mechanism, the formation and rupture of nanoscale Ag filament inside the MoSe₂ nanosheets is suggested to explain the memory behaviour.

Original language	English
Pages (from-to)	148-153
Number of pages	6
Journal	Journal of Colloid and Interface Science
Volume	505
DOIs	https://doi.org/10.1016/j.jcis.2017.05.082
State	Published - 1 Nov 2017
Externally published	Yes

Keywords

Ag filaments
Hydrothermal
Memory device
MoSe nanosheets
Resistive switching

Access to Document

10.1016/j.jcis.2017.05.082

Cite this

@article{6f9a324105564fddbdc9b82f743c2572,

title = "Ag filament induced nonvolatile resistive switching memory behaviour in hexagonal MoSe2 nanosheets",

abstract = "In this work, hexagonal MoSe2 nanosheets were prepared by hydrothermal process. Next, the resistive switching memory behaviour of single MoSe2 nanosheets was further investigated. We observed that MoSe2 nanosheets based memory device show reproducible and stable bipolar resistive switching memory characteristics. Through the analysis for conductive mechanism, the formation and rupture of nanoscale Ag filament inside the MoSe2 nanosheets is suggested to explain the memory behaviour.",

keywords = "Ag filaments, Hydrothermal, Memory device, MoSe nanosheets, Resistive switching",

author = "Pengde Han and Bai Sun and Jia Li and Tianjing Li and Qingle Shi and Baoxiang Jiao and Qisheng Wu and Xuejiao Zhang",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Inc.",

year = "2017",

month = nov,

day = "1",

doi = "10.1016/j.jcis.2017.05.082",

language = "英语",

volume = "505",

pages = "148--153",

journal = "Journal of Colloid and Interface Science",

issn = "0021-9797",

publisher = "Academic Press Inc.",

}

TY - JOUR

T1 - Ag filament induced nonvolatile resistive switching memory behaviour in hexagonal MoSe2 nanosheets

AU - Han, Pengde

AU - Sun, Bai

AU - Li, Jia

AU - Li, Tianjing

AU - Shi, Qingle

AU - Jiao, Baoxiang

AU - Wu, Qisheng

AU - Zhang, Xuejiao

PY - 2017/11/1

Y1 - 2017/11/1

N2 - In this work, hexagonal MoSe2 nanosheets were prepared by hydrothermal process. Next, the resistive switching memory behaviour of single MoSe2 nanosheets was further investigated. We observed that MoSe2 nanosheets based memory device show reproducible and stable bipolar resistive switching memory characteristics. Through the analysis for conductive mechanism, the formation and rupture of nanoscale Ag filament inside the MoSe2 nanosheets is suggested to explain the memory behaviour.

AB - In this work, hexagonal MoSe2 nanosheets were prepared by hydrothermal process. Next, the resistive switching memory behaviour of single MoSe2 nanosheets was further investigated. We observed that MoSe2 nanosheets based memory device show reproducible and stable bipolar resistive switching memory characteristics. Through the analysis for conductive mechanism, the formation and rupture of nanoscale Ag filament inside the MoSe2 nanosheets is suggested to explain the memory behaviour.

KW - Ag filaments

KW - Hydrothermal

KW - Memory device

KW - MoSe nanosheets

KW - Resistive switching

UR - https://www.scopus.com/pages/publications/85019981909

U2 - 10.1016/j.jcis.2017.05.082

DO - 10.1016/j.jcis.2017.05.082

M3 - 文章

C2 - 28577464

AN - SCOPUS:85019981909

SN - 0021-9797

VL - 505

SP - 148

EP - 153

JO - Journal of Colloid and Interface Science

JF - Journal of Colloid and Interface Science

ER -

Ag filament induced nonvolatile resistive switching memory behaviour in hexagonal MoSe₂ nanosheets

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this