Actinic EUV-mask metrology: tools, concepts, components

Rainer Lebert; Azadeh Farahzadi; Wolfgang Diete; David Schäfer; Christoph Phiesel; Thomas Wilhein; Stefan Herbert; Aleksey Maryasov; Larissa Juschkin; Dominik Esser; Marco Hoefer; Dieter Hoffmann

doi:10.1117/12.896266

Actinic EUV-mask metrology: tools, concepts, components

Rainer Lebert
, Azadeh Farahzadi
, Wolfgang Diete
, David Schäfer
, Christoph Phiesel
, Thomas Wilhein
, Stefan Herbert
, Aleksey Maryasov
, Larissa Juschkin
, Dominik Esser
, Marco Hoefer
, Dieter Hoffmann

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

There is a strong demand for standalone actinic tools for mask blank and mask metrology. We expect to deliver contributions to key issues for the infrastructure tools such as actinic reflectometer, actinic defect inspection and components like high brightness sources together with our partners. With our EUV-reflectometer EUV-MBR we are ready to fulfill HVM requirements in accurate and sensitive spectral metrology. Migrating from mask blanks to masks is supported with integrated fiducial mark detection and small spot sizes of down to < 0.03 mm². Hence, the EUV-MBR is able to detect minimal variations on mask blank and can support process monitoring for our partners in European EXEPT project. For actinic blank inspection a proof of concept experiment based on an EUV microscope at BASC's EUV-Lamp allows for comparing actinic signatures with AFM scans. Results allow for extrapolation to sub 30 nm sensitivity and fast full blank scan. For LPP sources we demonstrated a new concept utilizing a laser, with parameters optimized for high brightness EUV generation and a new regenerative target concept for high position stability, gain, repetition rate operation and efficiency in the first proof of concept experiment. Up to 350 W/(mm² sr) from < 20 μm source size have been demonstrated.

Original language	English
Title of host publication	27th European Mask and Lithography Conference
DOIs	https://doi.org/10.1117/12.896266
State	Published - 2011
Externally published	Yes
Event	27th European Mask and Lithography Conference - Dresden, Germany Duration: 18 Jan 2011 → 19 Jan 2011

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7985
ISSN (Print)	0277-786X

Conference

Conference	27th European Mask and Lithography Conference
Country/Territory	Germany
City	Dresden
Period	18/01/11 → 19/01/11

Keywords

Actinic metrology
EUV
EUV-reflectometry
EUV-sources for metrology
Masks
Nanoscopy

Access to Document

10.1117/12.896266

Cite this

Lebert, R., Farahzadi, A., Diete, W., Schäfer, D., Phiesel, C., Wilhein, T., Herbert, S., Maryasov, A., Juschkin, L., Esser, D., Hoefer, M., & Hoffmann, D. (2011). Actinic EUV-mask metrology: tools, concepts, components. In 27th European Mask and Lithography Conference Article 79850B (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7985). https://doi.org/10.1117/12.896266

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title = "Actinic EUV-mask metrology: tools, concepts, components",

abstract = "There is a strong demand for standalone actinic tools for mask blank and mask metrology. We expect to deliver contributions to key issues for the infrastructure tools such as actinic reflectometer, actinic defect inspection and components like high brightness sources together with our partners. With our EUV-reflectometer EUV-MBR we are ready to fulfill HVM requirements in accurate and sensitive spectral metrology. Migrating from mask blanks to masks is supported with integrated fiducial mark detection and small spot sizes of down to < 0.03 mm2. Hence, the EUV-MBR is able to detect minimal variations on mask blank and can support process monitoring for our partners in European EXEPT project. For actinic blank inspection a proof of concept experiment based on an EUV microscope at BASC's EUV-Lamp allows for comparing actinic signatures with AFM scans. Results allow for extrapolation to sub 30 nm sensitivity and fast full blank scan. For LPP sources we demonstrated a new concept utilizing a laser, with parameters optimized for high brightness EUV generation and a new regenerative target concept for high position stability, gain, repetition rate operation and efficiency in the first proof of concept experiment. Up to 350 W/(mm2 sr) from < 20 μm source size have been demonstrated.",

keywords = "Actinic metrology, EUV, EUV-reflectometry, EUV-sources for metrology, Masks, Nanoscopy",

author = "Rainer Lebert and Azadeh Farahzadi and Wolfgang Diete and David Sch{\"a}fer and Christoph Phiesel and Thomas Wilhein and Stefan Herbert and Aleksey Maryasov and Larissa Juschkin and Dominik Esser and Marco Hoefer and Dieter Hoffmann",

year = "2011",

doi = "10.1117/12.896266",

language = "英语",

isbn = "9780819485533",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "27th European Mask and Lithography Conference",

note = "27th European Mask and Lithography Conference ; Conference date: 18-01-2011 Through 19-01-2011",

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Lebert, R, Farahzadi, A, Diete, W, Schäfer, D, Phiesel, C, Wilhein, T, Herbert, S, Maryasov, A, Juschkin, L, Esser, D, Hoefer, M & Hoffmann, D 2011, Actinic EUV-mask metrology: tools, concepts, components. in 27th European Mask and Lithography Conference., 79850B, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7985, 27th European Mask and Lithography Conference, Dresden, Germany, 18/01/11. https://doi.org/10.1117/12.896266

TY - GEN

T1 - Actinic EUV-mask metrology

T2 - 27th European Mask and Lithography Conference

AU - Lebert, Rainer

AU - Farahzadi, Azadeh

AU - Diete, Wolfgang

AU - Schäfer, David

AU - Phiesel, Christoph

AU - Wilhein, Thomas

AU - Herbert, Stefan

AU - Maryasov, Aleksey

AU - Juschkin, Larissa

AU - Esser, Dominik

AU - Hoefer, Marco

AU - Hoffmann, Dieter

PY - 2011

Y1 - 2011

N2 - There is a strong demand for standalone actinic tools for mask blank and mask metrology. We expect to deliver contributions to key issues for the infrastructure tools such as actinic reflectometer, actinic defect inspection and components like high brightness sources together with our partners. With our EUV-reflectometer EUV-MBR we are ready to fulfill HVM requirements in accurate and sensitive spectral metrology. Migrating from mask blanks to masks is supported with integrated fiducial mark detection and small spot sizes of down to < 0.03 mm2. Hence, the EUV-MBR is able to detect minimal variations on mask blank and can support process monitoring for our partners in European EXEPT project. For actinic blank inspection a proof of concept experiment based on an EUV microscope at BASC's EUV-Lamp allows for comparing actinic signatures with AFM scans. Results allow for extrapolation to sub 30 nm sensitivity and fast full blank scan. For LPP sources we demonstrated a new concept utilizing a laser, with parameters optimized for high brightness EUV generation and a new regenerative target concept for high position stability, gain, repetition rate operation and efficiency in the first proof of concept experiment. Up to 350 W/(mm2 sr) from < 20 μm source size have been demonstrated.

AB - There is a strong demand for standalone actinic tools for mask blank and mask metrology. We expect to deliver contributions to key issues for the infrastructure tools such as actinic reflectometer, actinic defect inspection and components like high brightness sources together with our partners. With our EUV-reflectometer EUV-MBR we are ready to fulfill HVM requirements in accurate and sensitive spectral metrology. Migrating from mask blanks to masks is supported with integrated fiducial mark detection and small spot sizes of down to < 0.03 mm2. Hence, the EUV-MBR is able to detect minimal variations on mask blank and can support process monitoring for our partners in European EXEPT project. For actinic blank inspection a proof of concept experiment based on an EUV microscope at BASC's EUV-Lamp allows for comparing actinic signatures with AFM scans. Results allow for extrapolation to sub 30 nm sensitivity and fast full blank scan. For LPP sources we demonstrated a new concept utilizing a laser, with parameters optimized for high brightness EUV generation and a new regenerative target concept for high position stability, gain, repetition rate operation and efficiency in the first proof of concept experiment. Up to 350 W/(mm2 sr) from < 20 μm source size have been demonstrated.

KW - Actinic metrology

KW - EUV

KW - EUV-reflectometry

KW - EUV-sources for metrology

KW - Masks

KW - Nanoscopy

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U2 - 10.1117/12.896266

DO - 10.1117/12.896266

M3 - 会议稿件

AN - SCOPUS:79955160252

SN - 9780819485533

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - 27th European Mask and Lithography Conference

Y2 - 18 January 2011 through 19 January 2011

ER -

Actinic EUV-mask metrology: tools, concepts, components

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