A Two-Tap Indirect Time-of-Flight CMOS Image Sensor With Pump Gate Modulator for Low-Power Applications

Bing Zhang; Congzhen Hu; Junhua Lai; Youze Xin; Zhuoqi Guo; Zhongming Xue; Li Dong; Chi Wang; Shuyu Lei; Guohe Zhang; Li Geng

doi:10.1109/TED.2021.3123045

A Two-Tap Indirect Time-of-Flight CMOS Image Sensor With Pump Gate Modulator for Low-Power Applications

Bing Zhang
, Congzhen Hu
, Junhua Lai
, Youze Xin
, Zhuoqi Guo
, Zhongming Xue
, Li Dong
, Chi Wang
, Shuyu Lei
, Guohe Zhang
, Li Geng

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University
ABAX Sensing Electronic Technology

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A 320 × 240 indirect time-of-flight (i-ToF) image sensor with a 5.6-μm two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump gate modulator (PGM), are proposed to achieve a maximum lateral modulation electric field of 1500 V/cm under the front-side illumination (FSI) process. As a result, the proposed time-of-flight (ToF) sensor shows 200-mW power consumption and 54% demodulation contrast (DC) at 50-MHz modulation frequency, depth noise less than 1% with 940-nm illuminator from 0.3 to 3 m.

Original language	English
Pages (from-to)	2858-2864
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	69
Issue number	6
DOIs	https://doi.org/10.1109/TED.2021.3123045
State	Published - 1 Jun 2022

Keywords

Front-side illumination (FSI)
indirect time-of-flight (i-ToF) image sensor
low power consumption
pinned layer doping
potential buffer region (PBR)
pump gate modulator (PGM)

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10.1109/TED.2021.3123045

Cite this

@article{8605d42b62de43e382dbd4bf033da219,

title = "A Two-Tap Indirect Time-of-Flight CMOS Image Sensor With Pump Gate Modulator for Low-Power Applications",

abstract = "A 320 {\texttimes} 240 indirect time-of-flight (i-ToF) image sensor with a 5.6-μm two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump gate modulator (PGM), are proposed to achieve a maximum lateral modulation electric field of 1500 V/cm under the front-side illumination (FSI) process. As a result, the proposed time-of-flight (ToF) sensor shows 200-mW power consumption and 54\% demodulation contrast (DC) at 50-MHz modulation frequency, depth noise less than 1\% with 940-nm illuminator from 0.3 to 3 m.",

keywords = "Front-side illumination (FSI), indirect time-of-flight (i-ToF) image sensor, low power consumption, pinned layer doping, potential buffer region (PBR), pump gate modulator (PGM)",

author = "Bing Zhang and Congzhen Hu and Junhua Lai and Youze Xin and Zhuoqi Guo and Zhongming Xue and Li Dong and Chi Wang and Shuyu Lei and Guohe Zhang and Li Geng",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2022",

month = jun,

day = "1",

doi = "10.1109/TED.2021.3123045",

language = "英语",

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pages = "2858--2864",

journal = "IEEE Transactions on Electron Devices",

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TY - JOUR

T1 - A Two-Tap Indirect Time-of-Flight CMOS Image Sensor With Pump Gate Modulator for Low-Power Applications

AU - Zhang, Bing

AU - Hu, Congzhen

AU - Lai, Junhua

AU - Xin, Youze

AU - Guo, Zhuoqi

AU - Xue, Zhongming

AU - Dong, Li

AU - Wang, Chi

AU - Lei, Shuyu

AU - Zhang, Guohe

AU - Geng, Li

PY - 2022/6/1

Y1 - 2022/6/1

N2 - A 320 × 240 indirect time-of-flight (i-ToF) image sensor with a 5.6-μm two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump gate modulator (PGM), are proposed to achieve a maximum lateral modulation electric field of 1500 V/cm under the front-side illumination (FSI) process. As a result, the proposed time-of-flight (ToF) sensor shows 200-mW power consumption and 54% demodulation contrast (DC) at 50-MHz modulation frequency, depth noise less than 1% with 940-nm illuminator from 0.3 to 3 m.

AB - A 320 × 240 indirect time-of-flight (i-ToF) image sensor with a 5.6-μm two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump gate modulator (PGM), are proposed to achieve a maximum lateral modulation electric field of 1500 V/cm under the front-side illumination (FSI) process. As a result, the proposed time-of-flight (ToF) sensor shows 200-mW power consumption and 54% demodulation contrast (DC) at 50-MHz modulation frequency, depth noise less than 1% with 940-nm illuminator from 0.3 to 3 m.

KW - Front-side illumination (FSI)

KW - indirect time-of-flight (i-ToF) image sensor

KW - low power consumption

KW - pinned layer doping

KW - potential buffer region (PBR)

KW - pump gate modulator (PGM)

UR - https://www.scopus.com/pages/publications/85118617121

U2 - 10.1109/TED.2021.3123045

DO - 10.1109/TED.2021.3123045

M3 - 文章

AN - SCOPUS:85118617121

SN - 0018-9383

VL - 69

SP - 2858

EP - 2864

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

A Two-Tap Indirect Time-of-Flight CMOS Image Sensor With Pump Gate Modulator for Low-Power Applications

Abstract

Keywords

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