A True Random Number Generator Based on Ionic Liquid Modulated Memristors

Bai Sun; Shubham Ranjan; Guangdong Zhou; Tao Guo; Cheng Du; Lan Wei; Y. Norman Zhou; Yimin A. Wu

doi:10.1021/acsaelm.1c00271

A True Random Number Generator Based on Ionic Liquid Modulated Memristors

Bai Sun
, Shubham Ranjan
, Guangdong Zhou
, Tao Guo
, Cheng Du
, Lan Wei
, Y. Norman Zhou
, Yimin A. Wu

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The memristor-based neuromorphic computing application, which is highly flexible and capable of handling large amounts of parallel information, is one of the major breakthroughs in the past decade. It sheds light on future high-density storage, ultrafast logic computing systems, advanced artificial intelligence, etc. To explore the applications based on memristive devices, a memristive device using an indium-gallium-zinc oxide (IGZO)-TiO2 bilayer film as the functional layer is demonstrated. Its memristive behavior can be modulated by diethylmethyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide (DEME-TFSI) ionic liquid (IL). Further, a true random number generator was designed on the basis of eight memristive units. This work demonstrates that ionic liquid regulated memristors can not only be used for data storage but also open up potential applications for cryptography.

Original language	English
Pages (from-to)	2380-2388
Number of pages	9
Journal	ACS Applied Electronic Materials
Volume	3
Issue number	5
DOIs	https://doi.org/10.1021/acsaelm.1c00271
State	Published - 25 May 2021
Externally published	Yes

Keywords

artificial intelligence
cryptography
ionic liquid
memristor
true random number generator

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10.1021/acsaelm.1c00271

Cite this

@article{fa94aed765bd46f294fe8c6f8857906b,

title = "A True Random Number Generator Based on Ionic Liquid Modulated Memristors",

abstract = "The memristor-based neuromorphic computing application, which is highly flexible and capable of handling large amounts of parallel information, is one of the major breakthroughs in the past decade. It sheds light on future high-density storage, ultrafast logic computing systems, advanced artificial intelligence, etc. To explore the applications based on memristive devices, a memristive device using an indium-gallium-zinc oxide (IGZO)-TiO2 bilayer film as the functional layer is demonstrated. Its memristive behavior can be modulated by diethylmethyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide (DEME-TFSI) ionic liquid (IL). Further, a true random number generator was designed on the basis of eight memristive units. This work demonstrates that ionic liquid regulated memristors can not only be used for data storage but also open up potential applications for cryptography.",

keywords = "artificial intelligence, cryptography, ionic liquid, memristor, true random number generator",

author = "Bai Sun and Shubham Ranjan and Guangdong Zhou and Tao Guo and Cheng Du and Lan Wei and Zhou, \{Y. Norman\} and Wu, \{Yimin A.\}",

note = "Publisher Copyright: {\textcopyright} ",

year = "2021",

month = may,

day = "25",

doi = "10.1021/acsaelm.1c00271",

language = "英语",

volume = "3",

pages = "2380--2388",

journal = "ACS Applied Electronic Materials",

issn = "2637-6113",

publisher = "American Chemical Society",

number = "5",

}

TY - JOUR

T1 - A True Random Number Generator Based on Ionic Liquid Modulated Memristors

AU - Sun, Bai

AU - Ranjan, Shubham

AU - Zhou, Guangdong

AU - Guo, Tao

AU - Du, Cheng

AU - Wei, Lan

AU - Zhou, Y. Norman

AU - Wu, Yimin A.

N1 - Publisher Copyright: ©

PY - 2021/5/25

Y1 - 2021/5/25

N2 - The memristor-based neuromorphic computing application, which is highly flexible and capable of handling large amounts of parallel information, is one of the major breakthroughs in the past decade. It sheds light on future high-density storage, ultrafast logic computing systems, advanced artificial intelligence, etc. To explore the applications based on memristive devices, a memristive device using an indium-gallium-zinc oxide (IGZO)-TiO2 bilayer film as the functional layer is demonstrated. Its memristive behavior can be modulated by diethylmethyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide (DEME-TFSI) ionic liquid (IL). Further, a true random number generator was designed on the basis of eight memristive units. This work demonstrates that ionic liquid regulated memristors can not only be used for data storage but also open up potential applications for cryptography.

AB - The memristor-based neuromorphic computing application, which is highly flexible and capable of handling large amounts of parallel information, is one of the major breakthroughs in the past decade. It sheds light on future high-density storage, ultrafast logic computing systems, advanced artificial intelligence, etc. To explore the applications based on memristive devices, a memristive device using an indium-gallium-zinc oxide (IGZO)-TiO2 bilayer film as the functional layer is demonstrated. Its memristive behavior can be modulated by diethylmethyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide (DEME-TFSI) ionic liquid (IL). Further, a true random number generator was designed on the basis of eight memristive units. This work demonstrates that ionic liquid regulated memristors can not only be used for data storage but also open up potential applications for cryptography.

KW - artificial intelligence

KW - cryptography

KW - ionic liquid

KW - memristor

KW - true random number generator

UR - https://www.scopus.com/pages/publications/85106492774

U2 - 10.1021/acsaelm.1c00271

DO - 10.1021/acsaelm.1c00271

M3 - 文章

AN - SCOPUS:85106492774

SN - 2637-6113

VL - 3

SP - 2380

EP - 2388

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 5

ER -

A True Random Number Generator Based on Ionic Liquid Modulated Memristors

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