A thermal network model considering thermal coupling effect and TIM degradation in IGBT modules

Thermal interface materials (TIMs), as important materials for heat dissipation of insulated gate bipolar transistor (IGBT) modules, degrade under long-term thermal cycling, resulting in elevated junction temperatures and threatening the safe operation of IGBT modules. In consideration of the thermal coupling effect in IGBT modules, this paper proposes a three-dimensional thermal network model characterizing the TIM degradation. An IGBT module with the TIM is adopted to establish the finite element method (FEM) model, in which the TIM layer is divided into regular areas. The thermal network is established by simulating the heat transfer paths. The thermal impedance in each path is extracted according to the heat flow through its area considering the TIM degradation. Thereby, the impact of thermal coupling and TIM degradation on junction temperature of IGBT modules could be characterized. Furthermore, the proposed thermal network is verified by simulation from calculation accuracy of junction temperature and TIM temperature.