A sustainable biomemristive memory device based on natural collagen

With the increasing demand for green electronic devices, the electronic devices based on biomaterials have been developed vigorously. Especially, the biomemristive memory device, which is prepared using biomaterials as functional layers, has shown great potential and application value in green and sustainable bioelectronic devices. In this work, the collagen, for the first time, was extracted from pigskin and utilized as the intermediate insulating layer for constructing two biomemoristive memory devices with Ag/Bio-film/ITO and Ag/Bio-film/Ti structures, in which it can be found that the high-resistance state/low-resistance state resistance ratio is ∼10 when the ITO was used as bottom electrode but it can be increased to ∼100 by using Ti as bottom electrode. Through further data analysis, we propose a mechanism of ions' redox and defect state filling to explain the switching mechanism of these devices. Our work indicates that the natural biomaterials which were derived from animals can be used to prepare the degradable and biocompatible bioelectronics devices.