TY - GEN
T1 - A Survey on Modeling of SiC IGBT
AU - Wu, Yuwei
AU - Wang, Laili
AU - Wang, Jianpeng
AU - Zhang, Feng
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - SiC IGBT is an emerging device in ultrahigh-voltage power electronic field. With the development of the device manufacture, the circuit models for it have emerged since 2012. First, the behavior of SiC IGBT is briefly introduced from material characteristics, static characteristic and dynamic characteristics. Then, the SiC IGBT circuit models proposed in public are reviewed. All the models are classified into three types, which are the derived models with modified material parameters, the derived models with modified special structure and other new models. The classification guides the scientists who intend to develop models for SiC IGBT or other promising devices. Each of the models is introduced in detail from its mechanism, specialty and simulation performance. Finally, the paper is concluded and the outlook in SiC IGBT modeling is discussed.
AB - SiC IGBT is an emerging device in ultrahigh-voltage power electronic field. With the development of the device manufacture, the circuit models for it have emerged since 2012. First, the behavior of SiC IGBT is briefly introduced from material characteristics, static characteristic and dynamic characteristics. Then, the SiC IGBT circuit models proposed in public are reviewed. All the models are classified into three types, which are the derived models with modified material parameters, the derived models with modified special structure and other new models. The classification guides the scientists who intend to develop models for SiC IGBT or other promising devices. Each of the models is introduced in detail from its mechanism, specialty and simulation performance. Finally, the paper is concluded and the outlook in SiC IGBT modeling is discussed.
KW - SiC IGBT
KW - circuit models
KW - review
UR - https://www.scopus.com/pages/publications/85124793845
U2 - 10.1109/WiPDAAsia51810.2021.9656094
DO - 10.1109/WiPDAAsia51810.2021.9656094
M3 - 会议稿件
AN - SCOPUS:85124793845
T3 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021
SP - 241
EP - 246
BT - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021
Y2 - 25 August 2021 through 27 August 2021
ER -