A resistive switching memory device with a negative differential resistance at room temperature

Mayameen S. Kadhim; Feng Yang; Bai Sun; Yushu Wang; Tao Guo; Yongfang Jia; Ling Yuan; Yanmei Yu; Yong Zhao

doi:10.1063/1.5037191

A resistive switching memory device with a negative differential resistance at room temperature

Mayameen S. Kadhim
, Feng Yang
, Bai Sun
, Yushu Wang
, Tao Guo
, Yongfang Jia
, Ling Yuan
, Yanmei Yu
, Yong Zhao

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

In this study, large-area ZnO nanorod arrays covering a Zn foil substrate were produced by a low-cost and low temperature approach. In this approach, oxidation of zinc metal was achieved in a formamide/water mixture. Taking advantage of the product, a sandwiched structure, Ag/ZnO/Zn, was fabricated in which Ag acts as the top electrode, ZnO as the active layer and Zn foil as the bottom electrode. Resistive switching memory behavior (with an HRS/LRS resistance ratio of ∼10) along with a negative differential resistance effect (the largest slope being -3.85) was synchronously observed for this device at room temperature. This device opens up possibilities for multifunctional components in future electronic applications.

Original language	English
Article number	053502
Journal	Applied Physics Letters
Volume	113
Issue number	5
DOIs	https://doi.org/10.1063/1.5037191
State	Published - 30 Jul 2018
Externally published	Yes

Access to Document

10.1063/1.5037191

Cite this

@article{6239f99306b04f129a167b267fec2986,

title = "A resistive switching memory device with a negative differential resistance at room temperature",

abstract = "In this study, large-area ZnO nanorod arrays covering a Zn foil substrate were produced by a low-cost and low temperature approach. In this approach, oxidation of zinc metal was achieved in a formamide/water mixture. Taking advantage of the product, a sandwiched structure, Ag/ZnO/Zn, was fabricated in which Ag acts as the top electrode, ZnO as the active layer and Zn foil as the bottom electrode. Resistive switching memory behavior (with an HRS/LRS resistance ratio of ∼10) along with a negative differential resistance effect (the largest slope being -3.85) was synchronously observed for this device at room temperature. This device opens up possibilities for multifunctional components in future electronic applications.",

author = "Kadhim, \{Mayameen S.\} and Feng Yang and Bai Sun and Yushu Wang and Tao Guo and Yongfang Jia and Ling Yuan and Yanmei Yu and Yong Zhao",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = jul,

day = "30",

doi = "10.1063/1.5037191",

language = "英语",

volume = "113",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - A resistive switching memory device with a negative differential resistance at room temperature

AU - Kadhim, Mayameen S.

AU - Yang, Feng

AU - Sun, Bai

AU - Wang, Yushu

AU - Guo, Tao

AU - Jia, Yongfang

AU - Yuan, Ling

AU - Yu, Yanmei

AU - Zhao, Yong

PY - 2018/7/30

Y1 - 2018/7/30

N2 - In this study, large-area ZnO nanorod arrays covering a Zn foil substrate were produced by a low-cost and low temperature approach. In this approach, oxidation of zinc metal was achieved in a formamide/water mixture. Taking advantage of the product, a sandwiched structure, Ag/ZnO/Zn, was fabricated in which Ag acts as the top electrode, ZnO as the active layer and Zn foil as the bottom electrode. Resistive switching memory behavior (with an HRS/LRS resistance ratio of ∼10) along with a negative differential resistance effect (the largest slope being -3.85) was synchronously observed for this device at room temperature. This device opens up possibilities for multifunctional components in future electronic applications.

AB - In this study, large-area ZnO nanorod arrays covering a Zn foil substrate were produced by a low-cost and low temperature approach. In this approach, oxidation of zinc metal was achieved in a formamide/water mixture. Taking advantage of the product, a sandwiched structure, Ag/ZnO/Zn, was fabricated in which Ag acts as the top electrode, ZnO as the active layer and Zn foil as the bottom electrode. Resistive switching memory behavior (with an HRS/LRS resistance ratio of ∼10) along with a negative differential resistance effect (the largest slope being -3.85) was synchronously observed for this device at room temperature. This device opens up possibilities for multifunctional components in future electronic applications.

UR - https://www.scopus.com/pages/publications/85051057370

U2 - 10.1063/1.5037191

DO - 10.1063/1.5037191

M3 - 文章

AN - SCOPUS:85051057370

SN - 0003-6951

VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053502

ER -

A resistive switching memory device with a negative differential resistance at room temperature

Abstract

Access to Document

Other files and links

Fingerprint

Cite this