A PVP-silica-titania hybrid film for low-voltage organic field-effect transistor

A PVP-silica-titania hybrid film with excellent dielectric properties was fabricated by the sol–gel method at low temperature (180 °C). The film has a high dielectric constant (k = 13), a low leakage current density (<20nA cm⁻² at 2 V), and a smooth surface (Rq < 0.4 nm). The organic field-effect transistor (OFET), with the PVP-silica-titania hybrid film, had been fabricated and compared with the OFET, which was fabricated with SiO₂ dielectric. The electrical performance of the device had obviously improved in the operating voltage (−1.5 V), threshold voltage (−0.35 V), and mobility (0.7 cm² V⁻¹ s⁻¹). To investigate the suitability of the PVP-silica-titania hybrid film in flexible applications, a low-voltage flexible OFET was fabricated. The device had been tested in the bending state and exhibited good performance under the ambition conditions. The result demonstrated that the PVP-titania hybrid film is a promising candidate material for flexible organic electronics with low power consumption.