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A potentiometric oxygen sensor based on LaF3 using Pt micro grid as the sensing electrode

  • Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A solid-state gas sensor with the structure of Pt micro grid (sensing electrode)/ LaF3 (solid electrolyte)/ Sn, SnF2 (reference electrode) was developed for detecting oxygen at room temperature. In the oxygen sensor, Pt micro grid with the thickness of 60nm was fabricated on one side of the solid electrolyte (LaF3) wafer by lift-off process, which was used as a novel structure of sensing electrode for the purpose of changing the diffusion process of gas species and investigating the relationship between the sensing electrode dimensions and properties of the sensor. In order to form SnF2 layer on the other side of the LaF3 wafer, Sn film about 2μm thick was deposited on LaF3 wafer using sputtering technique first. Then the sensor cell was electrolysed at 0.2μA for 6 min in air at room temperature. The sensing mechanism was investigated in detail and it was found that the electromotive force(EMF) of the sensor depends on the partial pressure of O2. The sensing properties of the sensor were also tested.

Original languageEnglish
Title of host publicationNEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
Pages53-56
Number of pages4
DOIs
StatePublished - 2011
Event6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011 - Kaohsiung, Taiwan, Province of China
Duration: 20 Feb 201123 Feb 2011

Publication series

NameNEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Conference

Conference6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
Country/TerritoryTaiwan, Province of China
CityKaohsiung
Period20/02/1123/02/11

Keywords

  • LaF
  • Oxygen Sensor
  • Pt Micro Grid
  • Room Temperature

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