A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

Pingping Zheng; Xuejiao Zhang; Bai Sun; Shuangsuo Mao; Shouhui Zhu; Yudong Xia; Yong Zhao; Zhou Yu

doi:10.1142/S1793604718500236

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

Pingping Zheng
, Xuejiao Zhang
, Bai Sun
, Shuangsuo Mao
, Shouhui Zhu
, Yudong Xia
, Yong Zhao
, Zhou Yu

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this paper, the Cu₂ZnSnSe₄ (CZTSe) film was deposited on the fluorine-doped SnO₂ (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.

Original language	English
Article number	1850023
Journal	Functional Materials Letters
Volume	11
Issue number	2
DOIs	https://doi.org/10.1142/S1793604718500236
State	Published - 1 Apr 2018
Externally published	Yes

Keywords

CuZnSnSe
memory device
non-volatile
resistance ratio increasing
resistive switching

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10.1142/S1793604718500236

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@article{e7a040bcf1bb4230b4ab0a4da1bc0343,

title = "A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices",

abstract = "In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.",

keywords = "CuZnSnSe, memory device, non-volatile, resistance ratio increasing, resistive switching",

author = "Pingping Zheng and Xuejiao Zhang and Bai Sun and Shuangsuo Mao and Shouhui Zhu and Yudong Xia and Yong Zhao and Zhou Yu",

note = "Publisher Copyright: {\textcopyright} 2018 World Scientific Publishing Company.",

year = "2018",

month = apr,

day = "1",

doi = "10.1142/S1793604718500236",

language = "英语",

volume = "11",

journal = "Functional Materials Letters",

issn = "1793-6047",

publisher = "World Scientific",

number = "2",

}

TY - JOUR

T1 - A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

AU - Zheng, Pingping

AU - Zhang, Xuejiao

AU - Sun, Bai

AU - Mao, Shuangsuo

AU - Zhu, Shouhui

AU - Xia, Yudong

AU - Zhao, Yong

AU - Yu, Zhou

PY - 2018/4/1

Y1 - 2018/4/1

N2 - In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.

AB - In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.

KW - CuZnSnSe

KW - memory device

KW - non-volatile

KW - resistance ratio increasing

KW - resistive switching

UR - https://www.scopus.com/pages/publications/85043462341

U2 - 10.1142/S1793604718500236

DO - 10.1142/S1793604718500236

M3 - 文章

AN - SCOPUS:85043462341

SN - 1793-6047

VL - 11

JO - Functional Materials Letters

JF - Functional Materials Letters

IS - 2

M1 - 1850023

ER -

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

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Keywords

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