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A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors

  • Zikang Lin
  • , Xiaohui Wu
  • , Shujing Zhao
  • , Weihua Liu
  • , Xin Li
  • , Li Geng
  • , Chuanyu Han
  • Xi'an Jiaotong University

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this study, VO2 Mott memristors have been successfully fabricated, leading to the proposal of a passive and scalable high-order neural circuit. This circuit consists of two coupled VO2 Mott memristors, two resistors, and three capacitors. The proposed high-order neural circuit demonstrates 11 distinct firing behaviors similar to those of biological neurons, along with controllable burst firing patterns. The spikes, interspike interval (ISI) within a burst, and the quiescence interval between bursts can be adjusted by varying the capacitance and resistance values. In addition, this circuit operates without the need for a bias supply or inductors, enhancing its scalability. This design not only improves circuit interconnection but also effectively reduces power consumption, providing a solid foundation for the development of spiking neural networks (SNNs).

Original languageEnglish
Pages (from-to)60-66
Number of pages7
JournalIEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Volume11
DOIs
StatePublished - 2025

Keywords

  • Bursting firing
  • VO Mott memristor
  • high-order neuron
  • passive circuit

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