A novel solid-state DC-breaker based on cascaded SiC MOSFETs

Yu Ren; Xu Yang; Liang Qiao; Fan Zhang; Laili Wang

doi:10.1109/APEC.2017.7930791

A novel solid-state DC-breaker based on cascaded SiC MOSFETs

Yu Ren
, Xu Yang
, Liang Qiao
, Fan Zhang
, Laili Wang

School of Electrical Engineering

Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

A novel control topology based on a single standard gate driver for cascaded SiC MOSFETs is proposed firstly in this paper. Then, the 2.4kV, 20A experimental prototype validates the analysis and shows the availability of the proposed topology. Furthermore, the operating characteristics of solid-state DC breaker is analyzed, some elements are added to the proposed cascade SiC MOSFETs stack based on the analysis to make it suitable to DC-breaker application. The 2.4kV, 20A DC-breaker prototype verifies the proposed DC-breaker topology, the voltage across two cascaded devices shows a consistency during shutdown process of the short circuit current.

Original language	English
Title of host publication	2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	824-828
Number of pages	5
ISBN (Electronic)	9781509053667
DOIs	https://doi.org/10.1109/APEC.2017.7930791
State	Published - 17 May 2017
Event	32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017 - Tampa, United States Duration: 26 Mar 2017 → 30 Mar 2017

Publication series

Name	Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Conference

Conference	32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017
Country/Territory	United States
City	Tampa
Period	26/03/17 → 30/03/17

Keywords

Gate driver
SiC MOSFET
Solid-state DC-breaker
Voltage distribution

Access to Document

10.1109/APEC.2017.7930791

Cite this

Ren, Y., Yang, X., Qiao, L., Zhang, F., & Wang, L. (2017). A novel solid-state DC-breaker based on cascaded SiC MOSFETs. In 2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017 (pp. 824-828). Article 7930791 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC.2017.7930791

@inproceedings{23794cc4342d400b8c07df951ae2b645,

title = "A novel solid-state DC-breaker based on cascaded SiC MOSFETs",

abstract = "A novel control topology based on a single standard gate driver for cascaded SiC MOSFETs is proposed firstly in this paper. Then, the 2.4kV, 20A experimental prototype validates the analysis and shows the availability of the proposed topology. Furthermore, the operating characteristics of solid-state DC breaker is analyzed, some elements are added to the proposed cascade SiC MOSFETs stack based on the analysis to make it suitable to DC-breaker application. The 2.4kV, 20A DC-breaker prototype verifies the proposed DC-breaker topology, the voltage across two cascaded devices shows a consistency during shutdown process of the short circuit current.",

keywords = "Gate driver, SiC MOSFET, Solid-state DC-breaker, Voltage distribution",

author = "Yu Ren and Xu Yang and Liang Qiao and Fan Zhang and Laili Wang",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017 ; Conference date: 26-03-2017 Through 30-03-2017",

year = "2017",

month = may,

day = "17",

doi = "10.1109/APEC.2017.7930791",

language = "英语",

series = "Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "824--828",

booktitle = "2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017",

}

Ren, Y, Yang, X, Qiao, L, Zhang, F & Wang, L 2017, A novel solid-state DC-breaker based on cascaded SiC MOSFETs. in 2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017., 7930791, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, Institute of Electrical and Electronics Engineers Inc., pp. 824-828, 32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017, Tampa, United States, 26/03/17. https://doi.org/10.1109/APEC.2017.7930791

A novel solid-state DC-breaker based on cascaded SiC MOSFETs. / Ren, Yu; Yang, Xu; Qiao, Liang et al.
2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 824-828 7930791 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A novel solid-state DC-breaker based on cascaded SiC MOSFETs

AU - Ren, Yu

AU - Yang, Xu

AU - Qiao, Liang

AU - Zhang, Fan

AU - Wang, Laili

PY - 2017/5/17

Y1 - 2017/5/17

N2 - A novel control topology based on a single standard gate driver for cascaded SiC MOSFETs is proposed firstly in this paper. Then, the 2.4kV, 20A experimental prototype validates the analysis and shows the availability of the proposed topology. Furthermore, the operating characteristics of solid-state DC breaker is analyzed, some elements are added to the proposed cascade SiC MOSFETs stack based on the analysis to make it suitable to DC-breaker application. The 2.4kV, 20A DC-breaker prototype verifies the proposed DC-breaker topology, the voltage across two cascaded devices shows a consistency during shutdown process of the short circuit current.

AB - A novel control topology based on a single standard gate driver for cascaded SiC MOSFETs is proposed firstly in this paper. Then, the 2.4kV, 20A experimental prototype validates the analysis and shows the availability of the proposed topology. Furthermore, the operating characteristics of solid-state DC breaker is analyzed, some elements are added to the proposed cascade SiC MOSFETs stack based on the analysis to make it suitable to DC-breaker application. The 2.4kV, 20A DC-breaker prototype verifies the proposed DC-breaker topology, the voltage across two cascaded devices shows a consistency during shutdown process of the short circuit current.

KW - Gate driver

KW - SiC MOSFET

KW - Solid-state DC-breaker

KW - Voltage distribution

UR - https://www.scopus.com/pages/publications/85020022984

U2 - 10.1109/APEC.2017.7930791

DO - 10.1109/APEC.2017.7930791

M3 - 会议稿件

AN - SCOPUS:85020022984

T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

SP - 824

EP - 828

BT - 2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017

Y2 - 26 March 2017 through 30 March 2017

ER -

Ren Y, Yang X, Qiao L, Zhang F , Wang L. A novel solid-state DC-breaker based on cascaded SiC MOSFETs. In 2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 824-828. 7930791. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). doi: 10.1109/APEC.2017.7930791

A novel solid-state DC-breaker based on cascaded SiC MOSFETs

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Keywords

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