A novel MEMS force sensor based on Laterally Movable Gate Array Field Effect Transistor(LMGAFET)

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8 Scopus citations

Abstract

In this research, we propose a novel MEMS sensor based on Laterally Movable Gate Array Field Effect Transistor (LMGAFET) for the measurement of nN force. By designing an array structure and adopting reasonable parameters and utilizing modified MOS3 model, the sensor's proved to have high sensitivity of 0.107 mA/nN, low cross-Axis sensitivity and excellent linearity. Besides, a modified MOS3 model is presented and utilized to demonstrate operation behavior of the sensor. This sensor with the ability of measuring nN force can be widely used in evaluate biophysical properties measurement of cells or tissues.

Original languageEnglish
Title of host publication2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages723-727
Number of pages5
ISBN (Electronic)9781509030590
DOIs
StatePublished - 25 Aug 2017
Event12th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017 - Los Angeles, United States
Duration: 9 Apr 201712 Apr 2017

Publication series

Name2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017

Conference

Conference12th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017
Country/TerritoryUnited States
CityLos Angeles
Period9/04/1712/04/17

Keywords

  • FET
  • MEMS
  • biophysical properties measurement
  • force sensor

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