A novel high temperature pressure sensor on the basis of SOI layers

Zhao Yulong; Zhao Libo; Jiang Zhuangde

doi:10.1016/j.sna.2003.07.011

A novel high temperature pressure sensor on the basis of SOI layers

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70 Scopus citations

Abstract

The principle of silicon-on-insulator (SOI) and low pressure chemical vapour deposited (LPCVD) to make the piezoresisitive pressure gauge is developed. A novel structure of the sensors for harsh environment is designed. In particular, the high temperature pressure sensors were used in: automotive industry, aviation engineering, as well as in oil fields, industrial measurement and control systems. The sensor could be used in 200 °C environment, and could endure the impact of instances high temperature (about 1000, and less than 0.5 s) because of it's mechanical structure of cantilever bonded with SOI strain gauge. The test data of the sensor is obtained, and the result is satisfied.

Original language	English
Pages (from-to)	108-111
Number of pages	4
Journal	Sensors and Actuators A: Physical
Volume	108
Issue number	1-3
DOIs	https://doi.org/10.1016/j.sna.2003.07.011
State	Published - 15 Nov 2003

Keywords

Harsh environment
Pressure sensor
SOI strain gauge

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10.1016/j.sna.2003.07.011

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title = "A novel high temperature pressure sensor on the basis of SOI layers",

abstract = "The principle of silicon-on-insulator (SOI) and low pressure chemical vapour deposited (LPCVD) to make the piezoresisitive pressure gauge is developed. A novel structure of the sensors for harsh environment is designed. In particular, the high temperature pressure sensors were used in: automotive industry, aviation engineering, as well as in oil fields, industrial measurement and control systems. The sensor could be used in 200 °C environment, and could endure the impact of instances high temperature (about 1000, and less than 0.5 s) because of it's mechanical structure of cantilever bonded with SOI strain gauge. The test data of the sensor is obtained, and the result is satisfied.",

keywords = "Harsh environment, Pressure sensor, SOI strain gauge",

author = "Zhao Yulong and Zhao Libo and Jiang Zhuangde",

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T1 - A novel high temperature pressure sensor on the basis of SOI layers

AU - Yulong, Zhao

AU - Libo, Zhao

AU - Zhuangde, Jiang

PY - 2003/11/15

Y1 - 2003/11/15

N2 - The principle of silicon-on-insulator (SOI) and low pressure chemical vapour deposited (LPCVD) to make the piezoresisitive pressure gauge is developed. A novel structure of the sensors for harsh environment is designed. In particular, the high temperature pressure sensors were used in: automotive industry, aviation engineering, as well as in oil fields, industrial measurement and control systems. The sensor could be used in 200 °C environment, and could endure the impact of instances high temperature (about 1000, and less than 0.5 s) because of it's mechanical structure of cantilever bonded with SOI strain gauge. The test data of the sensor is obtained, and the result is satisfied.

AB - The principle of silicon-on-insulator (SOI) and low pressure chemical vapour deposited (LPCVD) to make the piezoresisitive pressure gauge is developed. A novel structure of the sensors for harsh environment is designed. In particular, the high temperature pressure sensors were used in: automotive industry, aviation engineering, as well as in oil fields, industrial measurement and control systems. The sensor could be used in 200 °C environment, and could endure the impact of instances high temperature (about 1000, and less than 0.5 s) because of it's mechanical structure of cantilever bonded with SOI strain gauge. The test data of the sensor is obtained, and the result is satisfied.

KW - Harsh environment

KW - Pressure sensor

KW - SOI strain gauge

UR - https://www.scopus.com/pages/publications/0344083437

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DO - 10.1016/j.sna.2003.07.011

M3 - 文章

AN - SCOPUS:0344083437

SN - 0924-4247

VL - 108

SP - 108

EP - 111

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

IS - 1-3

ER -

A novel high temperature pressure sensor on the basis of SOI layers

Abstract

Keywords

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