Abstract
Ultra-fine ZnO nanowires can be easily synthesized at 800°C in air via oxidation of Zn nanowires which is produced by heating ZnO+C mixture at 1100°C under a flow of nitrogen gas. Field-emission scanning electron microscope and transmission electron microscope investigations show that the ultra-fine ZnO nanowires grown out from Zn nanowires are high-quality single nanocrystals. The diameter of the ultra-fine ZnO nanowires ranges from 8 to 20nm and their length is 400nm - 1μm, having a high aspect ratio of ∼50. The growth mechanism of the ultra-fine ZnO nanowires is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 482-486 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 265 |
| Issue number | 3-4 |
| DOIs | |
| State | Published - 1 May 2004 |
| Externally published | Yes |
Keywords
- A1. Nanostructures
- A2. Growth from vapor
- A2. Single crystal growth
- B2. Semiconducting materials