A novel and simple growth route towards ultra-fine ZnO nanowires

  • Zheng Chen
  • , Zhiwei Shan
  • , Shouxin Li
  • , C. B. Liang
  • , Scott X. Mao

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

Ultra-fine ZnO nanowires can be easily synthesized at 800°C in air via oxidation of Zn nanowires which is produced by heating ZnO+C mixture at 1100°C under a flow of nitrogen gas. Field-emission scanning electron microscope and transmission electron microscope investigations show that the ultra-fine ZnO nanowires grown out from Zn nanowires are high-quality single nanocrystals. The diameter of the ultra-fine ZnO nanowires ranges from 8 to 20nm and their length is 400nm - 1μm, having a high aspect ratio of ∼50. The growth mechanism of the ultra-fine ZnO nanowires is discussed.

Original languageEnglish
Pages (from-to)482-486
Number of pages5
JournalJournal of Crystal Growth
Volume265
Issue number3-4
DOIs
StatePublished - 1 May 2004
Externally publishedYes

Keywords

  • A1. Nanostructures
  • A2. Growth from vapor
  • A2. Single crystal growth
  • B2. Semiconducting materials

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