TY - GEN
T1 - A monolithic multi-sensor for three-axis accelerometer, absolute pressure and temperature
AU - Xu, Jingbo
AU - Zhao, Yulong
AU - Jiang, Zhuangde
AU - Sun, Jian
PY - 2006
Y1 - 2006
N2 - A monolithic multi-sensor for use in the severe environments is presented in the paper. This monolithic multi-sensor is realized by using (100) SOI wafer, which consists of a three-axis piezoresistive accelerometer, a piezoresistive absolute pressure sensor and a silicon thermistor temperature sensor. The three-axis accelerometer has been designed with four silicon beams to support the mass. The appropriate piezoresistor arrangement in four beams can detect three-axis acceleration and eliminate cross-axis sensitivities. The pressure sensor consists of silicon membrane with four piezoresistors and vacuum chamber between silicon membrane and pyrex glass substrate. In order to minimize the effect of stress on temperature sensor, the thermistor made of boron ion-implanted is along [100] and [010] crystal orientation. The multi-sensor chip is fabricated by using bulk-micromachining technology and silicon-on-glass anodic bonding technology. The die size of the chip is 4×6×0. 9mm3. Measure results show the performance of the multi-sensor.
AB - A monolithic multi-sensor for use in the severe environments is presented in the paper. This monolithic multi-sensor is realized by using (100) SOI wafer, which consists of a three-axis piezoresistive accelerometer, a piezoresistive absolute pressure sensor and a silicon thermistor temperature sensor. The three-axis accelerometer has been designed with four silicon beams to support the mass. The appropriate piezoresistor arrangement in four beams can detect three-axis acceleration and eliminate cross-axis sensitivities. The pressure sensor consists of silicon membrane with four piezoresistors and vacuum chamber between silicon membrane and pyrex glass substrate. In order to minimize the effect of stress on temperature sensor, the thermistor made of boron ion-implanted is along [100] and [010] crystal orientation. The multi-sensor chip is fabricated by using bulk-micromachining technology and silicon-on-glass anodic bonding technology. The die size of the chip is 4×6×0. 9mm3. Measure results show the performance of the multi-sensor.
UR - https://www.scopus.com/pages/publications/42549149847
U2 - 10.1109/ICSENS.2007.355805
DO - 10.1109/ICSENS.2007.355805
M3 - 会议稿件
AN - SCOPUS:42549149847
SN - 1424403766
SN - 9781424403769
T3 - Proceedings of IEEE Sensors
SP - 1049
EP - 1052
BT - 2006 5th IEEE Conference on Sensors
T2 - 2006 5th IEEE Conference on Sensors
Y2 - 22 October 2006 through 25 October 2006
ER -