@inproceedings{6675896832a7464fb73cbe6c2ab4a46b,
title = "A Low-Cost High-Performance Transient Voltage Sensing Circuit for SiC MOSFETs",
abstract = "Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) present good features on its switching speed, operation voltage and will future improve the performance of power electronic devices in medium and high power. However, it also puts forward new requirements for voltage measurement, which is high bandwidth under high voltage conditions. This paper proposes a high voltage and high bandwidth voltage sensing circuit that uses the characteristics of the same resistor with the same parasitic capacitance to meet the high frequency constraint of voltage sensing circuit. By using the proposed circuit in conjunction with an appropriate load compensation method, the withstand voltage rating of low-voltage and high-bandwidth passive probes can be extended to required levels. The performance of the voltage measurement is experimentally verified and compared.",
keywords = "SiC MOSFET, high bandwidth, high voltage, voltage sensing circuit",
author = "Chengzi Yang and Huaqing Li and Yunfei Xu and Longyang Yu and Yongbin Jiang and Laili Wang and Yunqing Pei and Hong Zhang and Yongmei Gan",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 9th IEEE International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia ; Conference date: 29-11-2020 Through 02-12-2020",
year = "2020",
month = nov,
day = "29",
doi = "10.1109/IPEMC-ECCEAsia48364.2020.9367817",
language = "英语",
series = "2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "966--970",
booktitle = "2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia",
}