TY - GEN
T1 - A Ku-band TRX Front-End With High Performance In 0.15-μm GaAs PHEMT Technology
AU - Dong, Qian
AU - Liang, Chenglong
AU - Tan, Yuzhou
AU - Gao, Zixun
AU - Zhao, Ya
AU - Dong, Xingguo
AU - Liu, Yihui
AU - Tang, Bingjun
AU - Guo, Zhuoqi
AU - Xue, Zhongming
AU - Geng, Li
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - A time-division duplex (TDD) transmit/receive (T/R) Ku-band (15 GHz ~ 18 GHz) front-end in 0.15-μm GaAs for phased array radars is presented. The front-end consists of a power amplifier (PA), a low noise amplifier (LNA), and a singlepole double-throw (SPDT) switch. In this work, a transistor stacked switch is proposed with high-power-handling capability (simulated IP1dB > 34.7dB) and low insertion loss (IL) over the band. A power combining and dividing matching network is designed for outputting large power. A three-stage current-reuse LNA is introduced to reduce the power consumption. Measurements show that, in transmitting mode, the PA achieves the maximum output power of 28.6 ~ 29.3 dBm and the peak power added efficiency (PAE) of 35.7 ~ 44.5 % over the band. In receiving mode, the LNA achieves a gain of 19.9 ~20.9 dB and a noise figure (NF) of 2.8 ~4 dB while drawing 34.4 mA from 3.3 V supply. The overall chip area is 6 mm2, including pads.
AB - A time-division duplex (TDD) transmit/receive (T/R) Ku-band (15 GHz ~ 18 GHz) front-end in 0.15-μm GaAs for phased array radars is presented. The front-end consists of a power amplifier (PA), a low noise amplifier (LNA), and a singlepole double-throw (SPDT) switch. In this work, a transistor stacked switch is proposed with high-power-handling capability (simulated IP1dB > 34.7dB) and low insertion loss (IL) over the band. A power combining and dividing matching network is designed for outputting large power. A three-stage current-reuse LNA is introduced to reduce the power consumption. Measurements show that, in transmitting mode, the PA achieves the maximum output power of 28.6 ~ 29.3 dBm and the peak power added efficiency (PAE) of 35.7 ~ 44.5 % over the band. In receiving mode, the LNA achieves a gain of 19.9 ~20.9 dB and a noise figure (NF) of 2.8 ~4 dB while drawing 34.4 mA from 3.3 V supply. The overall chip area is 6 mm2, including pads.
KW - low noise amplifiers (LNA)
KW - power amplifier (PA)
KW - transistor stacked switch
UR - https://www.scopus.com/pages/publications/105011940685
U2 - 10.1109/RFIT60557.2024.10812364
DO - 10.1109/RFIT60557.2024.10812364
M3 - 会议稿件
AN - SCOPUS:105011940685
T3 - 2024 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2024 - Proceedings
BT - 2024 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2024 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2024
Y2 - 28 August 2024 through 30 August 2024
ER -