A highly thermostable In2O3/ITO thin film thermocouple prepared via screen printing for high temperature measurements

Yantao Liu; Wei Ren; Peng Shi; Dan Liu; Yijun Zhang; Ming Liu; Zuo Guang Ye; Weixuan Jing; Bian Tian; Zhuangde Jiang

doi:10.3390/s18040958

A highly thermostable In₂O₃/ITO thin film thermocouple prepared via screen printing for high temperature measurements

Yantao Liu
, Wei Ren
, Peng Shi
, Dan Liu
, Yijun Zhang
, Ming Liu
, Zuo Guang Ye
, Weixuan Jing
, Bian Tian
, Zhuangde Jiang

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

An In₂O₃/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In₂O₃/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In₂O₃ films increased with the increase in annealing time. The thermoelectric voltage of the In₂O₃/ITO thermocouple was 53.5 mV at 1270 °C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 µV/°C. The drift rate of the In₂O₃/ITO thermocouple was 5.44 °C/h at a measuring time of 10 h at 1270 °C.

Original language	English
Article number	958
Journal	Sensors (Switzerland)
Volume	18
Issue number	4
DOIs	https://doi.org/10.3390/s18040958
State	Published - Apr 2018

Keywords

Screen printing
Seebeck coefficient
Thermocouple
Thermoelectric response

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10.3390/s18040958

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title = "A highly thermostable In2O3/ITO thin film thermocouple prepared via screen printing for high temperature measurements",

abstract = "An In2O3/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In2O3/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In2O3 films increased with the increase in annealing time. The thermoelectric voltage of the In2O3/ITO thermocouple was 53.5 mV at 1270 °C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 µV/°C. The drift rate of the In2O3/ITO thermocouple was 5.44 °C/h at a measuring time of 10 h at 1270 °C.",

keywords = "Screen printing, Seebeck coefficient, Thermocouple, Thermoelectric response",

author = "Yantao Liu and Wei Ren and Peng Shi and Dan Liu and Yijun Zhang and Ming Liu and Ye, \{Zuo Guang\} and Weixuan Jing and Bian Tian and Zhuangde Jiang",

note = "Publisher Copyright: {\textcopyright} 2018 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2018",

month = apr,

doi = "10.3390/s18040958",

language = "英语",

volume = "18",

journal = "Sensors (Switzerland)",

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TY - JOUR

T1 - A highly thermostable In2O3/ITO thin film thermocouple prepared via screen printing for high temperature measurements

AU - Liu, Yantao

AU - Ren, Wei

AU - Shi, Peng

AU - Liu, Dan

AU - Zhang, Yijun

AU - Liu, Ming

AU - Ye, Zuo Guang

AU - Jing, Weixuan

AU - Tian, Bian

AU - Jiang, Zhuangde

PY - 2018/4

Y1 - 2018/4

N2 - An In2O3/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In2O3/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In2O3 films increased with the increase in annealing time. The thermoelectric voltage of the In2O3/ITO thermocouple was 53.5 mV at 1270 °C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 µV/°C. The drift rate of the In2O3/ITO thermocouple was 5.44 °C/h at a measuring time of 10 h at 1270 °C.

AB - An In2O3/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In2O3/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In2O3 films increased with the increase in annealing time. The thermoelectric voltage of the In2O3/ITO thermocouple was 53.5 mV at 1270 °C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 µV/°C. The drift rate of the In2O3/ITO thermocouple was 5.44 °C/h at a measuring time of 10 h at 1270 °C.

KW - Screen printing

KW - Seebeck coefficient

KW - Thermocouple

KW - Thermoelectric response

UR - https://www.scopus.com/pages/publications/85044438083

U2 - 10.3390/s18040958

DO - 10.3390/s18040958

M3 - 文章

C2 - 29570680

AN - SCOPUS:85044438083

SN - 1424-8220

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JO - Sensors (Switzerland)

JF - Sensors (Switzerland)

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ER -

A highly thermostable In₂O₃/ITO thin film thermocouple prepared via screen printing for high temperature measurements

Abstract

Keywords

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