A graphene-silicon Schottky photodetector with graphene oxide interlayer

Yiming Wang; Shuming Yang; Dasaradha Rao Lambada; Shareen Shafique

doi:10.1016/j.sna.2020.112232

A graphene-silicon Schottky photodetector with graphene oxide interlayer

Yiming Wang
, Shuming Yang
, Dasaradha Rao Lambada
, Shareen Shafique

School of Mechanical Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

A photodetector based on graphene-silicon Schottky diode with graphene oxide (GO) interlayer was prepared in this research. The GO interlayer suppressed the dark current, and increased the photocurrent 2.73 times. With the reverse bias of 2 V, the responsivity of Gr/GO/n-Si Schottky photodiode was 0.65 A/W under 633 nm illumination, meanwhile the ON/OFF ratio reaches 2.73 × 10⁵ due to the insertion of GO interlayer. The characterization of photoelectric properties showed stable photo sensing performance with the increase of bias voltage and incident light power. The response time and recovery time were 1 ms, which indicated that the response speed of graphene-silicon Schottky photodiode was well preserved after inserting GO interlayer.

Original language	English
Article number	112232
Journal	Sensors and Actuators A: Physical
Volume	314
DOIs	https://doi.org/10.1016/j.sna.2020.112232
State	Published - 15 Oct 2020

Keywords

Graphene
Graphene oxide
Photodetector
Photoresponse
Schottky diode

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10.1016/j.sna.2020.112232

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title = "A graphene-silicon Schottky photodetector with graphene oxide interlayer",

abstract = "A photodetector based on graphene-silicon Schottky diode with graphene oxide (GO) interlayer was prepared in this research. The GO interlayer suppressed the dark current, and increased the photocurrent 2.73 times. With the reverse bias of 2 V, the responsivity of Gr/GO/n-Si Schottky photodiode was 0.65 A/W under 633 nm illumination, meanwhile the ON/OFF ratio reaches 2.73 × 105 due to the insertion of GO interlayer. The characterization of photoelectric properties showed stable photo sensing performance with the increase of bias voltage and incident light power. The response time and recovery time were 1 ms, which indicated that the response speed of graphene-silicon Schottky photodiode was well preserved after inserting GO interlayer.",

keywords = "Graphene, Graphene oxide, Photodetector, Photoresponse, Schottky diode",

author = "Yiming Wang and Shuming Yang and Lambada, \{Dasaradha Rao\} and Shareen Shafique",

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year = "2020",

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doi = "10.1016/j.sna.2020.112232",

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T1 - A graphene-silicon Schottky photodetector with graphene oxide interlayer

AU - Wang, Yiming

AU - Yang, Shuming

AU - Lambada, Dasaradha Rao

AU - Shafique, Shareen

PY - 2020/10/15

Y1 - 2020/10/15

N2 - A photodetector based on graphene-silicon Schottky diode with graphene oxide (GO) interlayer was prepared in this research. The GO interlayer suppressed the dark current, and increased the photocurrent 2.73 times. With the reverse bias of 2 V, the responsivity of Gr/GO/n-Si Schottky photodiode was 0.65 A/W under 633 nm illumination, meanwhile the ON/OFF ratio reaches 2.73 × 105 due to the insertion of GO interlayer. The characterization of photoelectric properties showed stable photo sensing performance with the increase of bias voltage and incident light power. The response time and recovery time were 1 ms, which indicated that the response speed of graphene-silicon Schottky photodiode was well preserved after inserting GO interlayer.

AB - A photodetector based on graphene-silicon Schottky diode with graphene oxide (GO) interlayer was prepared in this research. The GO interlayer suppressed the dark current, and increased the photocurrent 2.73 times. With the reverse bias of 2 V, the responsivity of Gr/GO/n-Si Schottky photodiode was 0.65 A/W under 633 nm illumination, meanwhile the ON/OFF ratio reaches 2.73 × 105 due to the insertion of GO interlayer. The characterization of photoelectric properties showed stable photo sensing performance with the increase of bias voltage and incident light power. The response time and recovery time were 1 ms, which indicated that the response speed of graphene-silicon Schottky photodiode was well preserved after inserting GO interlayer.

KW - Graphene

KW - Graphene oxide

KW - Photodetector

KW - Photoresponse

KW - Schottky diode

UR - https://www.scopus.com/pages/publications/85088922715

U2 - 10.1016/j.sna.2020.112232

DO - 10.1016/j.sna.2020.112232

M3 - 文章

AN - SCOPUS:85088922715

SN - 0924-4247

VL - 314

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

M1 - 112232

ER -

A graphene-silicon Schottky photodetector with graphene oxide interlayer

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Keywords

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