TY - GEN
T1 - A Gallium Nitride Intelligent Power Module Based on Bonding Wire Interconnection
AU - Yao, Yilong
AU - Zhang, Hong
AU - Yang, Fengtao
AU - Kong, Hang
AU - Wang, Yan
AU - Dong, Xiaobo
AU - Wang, Laili
AU - Wang, Kangping
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Short switching time of gallium nitride high electrons mobility transistors (GaN HEMTs) cause much more challenge for their package and integration. This article1proposes a hybrid packaging method based on bonding wire technology. This interconnection method inevitably increases the parasitic inductance of drive loop, leading to crosstalk and gate oscillation. A driving strategy to suppress these phenomena is applied in the gate loop. Finally, a hybrid packaging intelligent power module combined with print circuit board and direct bonding ceramic is fabricated. The power loop stray inductance of GaN HEMT half bridge is reduced to 1.94nH according to the experiment result. Based on the GaN half bridge of designed module, a 2.14kW boost converter has been built in this paper and its peak efficiency reaches 98.28%.
AB - Short switching time of gallium nitride high electrons mobility transistors (GaN HEMTs) cause much more challenge for their package and integration. This article1proposes a hybrid packaging method based on bonding wire technology. This interconnection method inevitably increases the parasitic inductance of drive loop, leading to crosstalk and gate oscillation. A driving strategy to suppress these phenomena is applied in the gate loop. Finally, a hybrid packaging intelligent power module combined with print circuit board and direct bonding ceramic is fabricated. The power loop stray inductance of GaN HEMT half bridge is reduced to 1.94nH according to the experiment result. Based on the GaN half bridge of designed module, a 2.14kW boost converter has been built in this paper and its peak efficiency reaches 98.28%.
KW - Gallium Nitride
KW - Intelligent power module
KW - power semiconductor integration
KW - power semiconductor package
UR - https://www.scopus.com/pages/publications/85162196279
U2 - 10.1109/APEC43580.2023.10131222
DO - 10.1109/APEC43580.2023.10131222
M3 - 会议稿件
AN - SCOPUS:85162196279
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 2538
EP - 2544
BT - APEC 2023 - 38th Annual IEEE Applied Power Electronics Conference and Exposition
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 38th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2023
Y2 - 19 March 2023 through 23 March 2023
ER -