@inproceedings{8bebb3856f154d76b5fbf5e360dc6cf0,
title = "A fully integrated CMOS active rectifier-booster regulator for rf energy harvesting",
abstract = "This paper presents a novel design of on-chip active rectifier-booster regulator (RBR) designed in a standard 180 nm CMOS technology for RF energy harvesting. The proposed regulator uses input signals with two different phases to avoid driving logics and cold-start circuits. The proposed regulator can achieve up to 7X voltage multiplying with capacitor load and a peak efficiency of 63\% with 20 \textbackslash{}mathrm\{k\}\textbackslash{}Omega load resistance.",
keywords = "Active rectifier-booster regulator, CMOS technology, RF energy harvesting",
author = "Zheyi Yuan and Shiquan Fan and Li Geng",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 ; Conference date: 12-06-2019 Through 14-06-2019",
year = "2019",
month = jun,
doi = "10.1109/EDSSC.2019.8754230",
language = "英语",
series = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",
}