TY - GEN
T1 - A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode
AU - Zhang, Feng
AU - Yang, Xu
AU - Xue, Wei
AU - Xie, Ruiliang
AU - Li, Yang
AU - Sha, Yilin
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/4/18
Y1 - 2018/4/18
N2 - A fast Thvenin equivalent model for IGBT considering the dynamic performance of both IGBT and antiparallel diode based on datasheet is proposed to increase the efficiency of power electronics transient simulation. In this paper, the conducting details of an IGBT with antiparallel diode switch are represented by a fixed topology equivalent: a voltage source in series with a constant resistance. For the first time, three devices are intergrated inside one model, and the conducting device is dynamically alternative among three statuses: IGBT, diode and open circuit, reflected in the changeable voltage source. So unchangeable admittance matrix is gained despite of the variation of conducting devices, which tremendously accelerates the calculation. A single phase half-bridge inverter circuit is tested applying the proposed model, and its accuracy and efficiency are validated.
AB - A fast Thvenin equivalent model for IGBT considering the dynamic performance of both IGBT and antiparallel diode based on datasheet is proposed to increase the efficiency of power electronics transient simulation. In this paper, the conducting details of an IGBT with antiparallel diode switch are represented by a fixed topology equivalent: a voltage source in series with a constant resistance. For the first time, three devices are intergrated inside one model, and the conducting device is dynamically alternative among three statuses: IGBT, diode and open circuit, reflected in the changeable voltage source. So unchangeable admittance matrix is gained despite of the variation of conducting devices, which tremendously accelerates the calculation. A single phase half-bridge inverter circuit is tested applying the proposed model, and its accuracy and efficiency are validated.
KW - Fixed topology modelling
KW - IGBT
KW - Power electronics
KW - Thevenin equivalent
UR - https://www.scopus.com/pages/publications/85046948319
U2 - 10.1109/APEC.2018.8341022
DO - 10.1109/APEC.2018.8341022
M3 - 会议稿件
AN - SCOPUS:85046948319
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 276
EP - 279
BT - APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018
Y2 - 4 March 2018 through 8 March 2018
ER -