A bioinspired flexible artificial mechanoreceptor based on VO2 insulator-metal transition memristor

  • Sheng Li Fang
  • , Chuan Yu Han
  • , Weihua Liu
  • , Zheng Rong Han
  • , Bo Ma
  • , Yi Lin Cui
  • , Shi Quan Fan
  • , Xin Li
  • , Xiao Li Wang
  • , Guo He Zhang
  • , Jun Qing Yin
  • , Xiao Dong Huang
  • , Li Geng

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Inspired by biological mechanoreceptors, we present a flexible artificial mechanoreceptor (FAM) based on high-performance VO2 insulator-metal transition (IMT) memristor with the functions of sensing, spikes coding and information fusion for the anthropomorphic neurorobotics. The flexible VO2 IMT memristors with the structure of Ti/Pt/VO2/Pt via-hole show bi-directional threshold switching performance, good endurance (>2 ×109) and excellent flexibility (>103 bending cycles). The FAM comprised of three receptors (flexible pressure sensors) and one flexible VO2 IMT memristor is able to detect, code and fuse the pressure information from different receptors into spike trains similar to the biological SA-Ⅰ mechanoreceptors, laying the foundation for the flexible electronic skin of anthropomorphic neurorobotics in the future.

Original languageEnglish
Article number165096
JournalJournal of Alloys and Compounds
Volume911
DOIs
StatePublished - 5 Aug 2022

Keywords

  • Artificial mechanoreceptor
  • Flexible memristor
  • Insulator-metal transition
  • VO

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