Abstract
This letter presents a 100-Gb/s CMOS PAM-4 transimpedance amplifier (TIA) with multimilliampere maximum linear input current. A low-noise high-linearity TIA architecture is proposed, leveraging the reconfigurable front-end (FE) TIA and the continuous time linear equalizer (CTLE) synced at multiple gain modes. Implemented in a 28-nm CMOS technology, the TIA achieves bandwidth of more than 24 GHz with transimpedance gain of 65 dB Ω, while showing an acrlong IRN current density of 10.4 pA/ √ Hz. The maximum linear input current reaches 2.2 mApp and the total harmonic distortion (THD) is less than 3% for an output swing of 600 mVpp, diff. The chip consumes power of 56 mW from 1.4 and 1.1-V supply.
| Original language | English |
|---|---|
| Pages (from-to) | 50-53 |
| Number of pages | 4 |
| Journal | IEEE Solid-State Circuits Letters |
| Volume | 7 |
| DOIs | |
| State | Published - 2024 |
Keywords
- 100-Gb/s PAM-4
- CMOS
- linearity
- low noise
- transimpedance amplifier (TIA)