@inproceedings{45341bacf4bc4e28a1f709bd82cfa27d,
title = "A 112Gb/s low-noise PAM-4 linear optical receiver in 28nm CMOS",
abstract = "A 112Gb/s PAM-4 linear optical receiver with low noise, high linearity in 28nm CMOS is presented. The receiver signal chain consists of a transimpedance amplifier (TIA), a continuous time linear equalizer (CTLE), a variable gain amplifier (VGA), and an output buffer. PMOS CML logic is used based on the device characteristics. The low-noise topology and novel gain control techniques together enable state-of-the-art performance. The receiver achieves 2.72\textbackslash{}mu Arms input-referred noise current, 71dB \textbackslash{}Omega transimpedance gain and 37 GHz bandwidth. It is able to provide 18.5dB dynamic range to support maximum input overload current of 1.8mApp. The total harmonica distortion (THD) is below 5\% under 660mVpp output swing. This receiver consumes 96.8mW from 1.5V supply.",
keywords = "112Gb/s, 28nm CMOS, Linear optical receiver, Low noise, Low power, Negative capacitance, PAM-4",
author = "Yongjun Shi and Dan Li and Shengwei Gao and Yihua Zhang and Li Geng",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 ; Conference date: 12-06-2019 Through 14-06-2019",
year = "2019",
month = jun,
doi = "10.1109/EDSSC.2019.8753978",
language = "英语",
series = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",
}