Abstract
The effective potential correction was used in 3D Monte Carlo simulation of nanoscale MOSFETs to deal with quantum mechanical effects. A parallel algorithm based on PC clusters was proposed. Every PC solved Poisson's equation with the multi-tier grid method and carried out the quantum correction using the effective potential method respectively for each grid node in one subarea, and simulated the accelerating flights and random scattering of one group of charge particles, such that the load balance of all PCs was consistently kept. Simulation results indicate that the quantum correction is in good agreement with the Schrödinger equation, and the proposed parallel algorithm has higher speedup ratio.
| Original language | English |
|---|---|
| Pages (from-to) | 183-186 |
| Number of pages | 4 |
| Journal | Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University |
| Volume | 40 |
| Issue number | 2 |
| State | Published - Feb 2006 |
| Externally published | Yes |
Keywords
- Metal oxide semiconductor field effect transistor
- Monte Carlo simulation
- Quantum effect