21.3: Controllable nano-scale fissure formation with a special conductive film structure in surface-conduction electron-emitter device

Sheng Li Wu; Ling Guo Zhao; Si Liang Xiong; Jin Tao Zhang; Wen Bo Hu; Xiao Ning Zhang

doi:10.1889/1.3500438

21.3: Controllable nano-scale fissure formation with a special conductive film structure in surface-conduction electron-emitter device

Sheng Li Wu
, Ling Guo Zhao
, Si Liang Xiong
, Jin Tao Zhang
, Wen Bo Hu
, Xiao Ning Zhang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The conductive film with a new special structure for surface-conduction electron-emitter device is proposed in this paper. With this new conductive film structure, the formation position of the nano-scale fissure can be controlled easily, and this will help to improve the uniformity of SED. The effectiveness was proved experimentally.

Original language	English
Pages (from-to)	304-306
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	41 1
DOIs	https://doi.org/10.1889/1.3500438
State	Published - May 2010

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@article{d2c4a011b1dd4690b9a59aad3547ef13,

title = "21.3: Controllable nano-scale fissure formation with a special conductive film structure in surface-conduction electron-emitter device",

abstract = "The conductive film with a new special structure for surface-conduction electron-emitter device is proposed in this paper. With this new conductive film structure, the formation position of the nano-scale fissure can be controlled easily, and this will help to improve the uniformity of SED. The effectiveness was proved experimentally.",

author = "Wu, \{Sheng Li\} and Zhao, \{Ling Guo\} and Xiong, \{Si Liang\} and Zhang, \{Jin Tao\} and Hu, \{Wen Bo\} and Zhang, \{Xiao Ning\}",

year = "2010",

month = may,

doi = "10.1889/1.3500438",

language = "英语",

volume = "41 1",

pages = "304--306",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc",

}

TY - JOUR

T1 - 21.3

T2 - Controllable nano-scale fissure formation with a special conductive film structure in surface-conduction electron-emitter device

AU - Wu, Sheng Li

AU - Zhao, Ling Guo

AU - Xiong, Si Liang

AU - Zhang, Jin Tao

AU - Hu, Wen Bo

AU - Zhang, Xiao Ning

PY - 2010/5

Y1 - 2010/5

N2 - The conductive film with a new special structure for surface-conduction electron-emitter device is proposed in this paper. With this new conductive film structure, the formation position of the nano-scale fissure can be controlled easily, and this will help to improve the uniformity of SED. The effectiveness was proved experimentally.

AB - The conductive film with a new special structure for surface-conduction electron-emitter device is proposed in this paper. With this new conductive film structure, the formation position of the nano-scale fissure can be controlled easily, and this will help to improve the uniformity of SED. The effectiveness was proved experimentally.

UR - https://www.scopus.com/pages/publications/84863315061

U2 - 10.1889/1.3500438

DO - 10.1889/1.3500438

M3 - 文章

AN - SCOPUS:84863315061

SN - 0097-966X

VL - 41 1

SP - 304

EP - 306

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

ER -

21.3: Controllable nano-scale fissure formation with a special conductive film structure in surface-conduction electron-emitter device

Abstract

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