Abstract
This paper reports the measured results of the 200 nm - 1000 nm characteristic spectral lines of AI, Si and Ar atoms when highly charged ions 40Ar10+ are incident upon AI and P-type Si surfaces. The ion 40Ar10+ is provided by the ECR ion source of the National Laboratory of the Heavy Ion Accelerator in Lanzhou. The results show that when the low-speed ions in the highly charged state interact with the solid surfaces, the characteristic spectral lines of the target atoms and ions spurted from the surfaces can be effectively excited. Moreover, because of the competition of the non-radiation de-excitation of the hollow atom by emitting secondary electrons with the de-excitation process by radiating photons, the spectral intensity of the characteristic spectral lines of Ar atoms on the P-type Si surface is, as a whole, greater than that of Ar atoms on the Al surface.
| Original language | English |
|---|---|
| Pages (from-to) | 528 |
| Number of pages | 1 |
| Journal | Science in China, Series G: Physics, Mechanics and Astronomy |
| Volume | 46 |
| Issue number | 5 |
| DOIs | |
| State | Published - Oct 2003 |
Keywords
- Characteristic spectrum
- Highly charged ion
- Hollow atom
- Spectral intensity
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