1/f noise as a tool to characterize negative bias instability in MOSFET

It is found in experiment that 1/f noise is closely correlated with negative-bias instability in MOSFETs, which is one of the most important reliability problems for MOS devices. The initial noise spectrum density is proportional to the drift of transconductance of MOSFETs that are subjected to negative bias and high temperature. It is shown from the mechanism analysis that both the instability and the noise are induced by oxide charges and traps near Si-SiO₂ interface. 1/f noise may therefore be used as an effective tool to predict and analyze negative-bias instability in MOS devices.