12 kV high voltage reversely switched dynistor assembly

Xiaoping He; Haiyang Wang; Jingzhi Zhou; Weiqing Chen; Binjie Xue; Junping Tang; Aici Qiu

doi:10.3788/HPLPB20102204.0803

12 kV high voltage reversely switched dynistor assembly

Xiaoping He
, Haiyang Wang
, Jingzhi Zhou
, Weiqing Chen
, Binjie Xue
, Junping Tang
, Aici Qiu

Northwest Institute of Nuclear Technology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The structure and working principle of reversely switched dynistor(RSD) semiconductor closing switch are introduced. Design techniques of the high voltage RSD assembly are analyzed. A 12 kV RSD assembly and its trigger system have been designed and constructed, which can operate at 10~12 kV. Test results show the stable and reliable operation of this assembly. Under 12 kV, the peak amplitude of current could reach 133 kA, with 24 C charge transferred and current rising rate of 4.12 kA/μs, and the peak power switched could reach 1.6 GW.

Original language	English
Pages (from-to)	803-806
Number of pages	4
Journal	Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams
Volume	22
Issue number	4
DOIs	https://doi.org/10.3788/HPLPB20102204.0803
State	Published - Apr 2010
Externally published	Yes

Keywords

High coulomb
High current
Magnetic switch
Reversely switched dynistor
Solid-state switch

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10.3788/HPLPB20102204.0803

Cite this

@article{57456893f62c49ffb4828b7d6a0da7f1,

title = "12 kV high voltage reversely switched dynistor assembly",

abstract = "The structure and working principle of reversely switched dynistor(RSD) semiconductor closing switch are introduced. Design techniques of the high voltage RSD assembly are analyzed. A 12 kV RSD assembly and its trigger system have been designed and constructed, which can operate at 10\textasciitilde{}12 kV. Test results show the stable and reliable operation of this assembly. Under 12 kV, the peak amplitude of current could reach 133 kA, with 24 C charge transferred and current rising rate of 4.12 kA/μs, and the peak power switched could reach 1.6 GW.",

keywords = "High coulomb, High current, Magnetic switch, Reversely switched dynistor, Solid-state switch",

author = "Xiaoping He and Haiyang Wang and Jingzhi Zhou and Weiqing Chen and Binjie Xue and Junping Tang and Aici Qiu",

year = "2010",

month = apr,

doi = "10.3788/HPLPB20102204.0803",

language = "英语",

volume = "22",

pages = "803--806",

journal = "Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams",

issn = "1001-4322",

publisher = "Editorial Office of High Power Laser and Particle Beams",

number = "4",

}

TY - JOUR

T1 - 12 kV high voltage reversely switched dynistor assembly

AU - He, Xiaoping

AU - Wang, Haiyang

AU - Zhou, Jingzhi

AU - Chen, Weiqing

AU - Xue, Binjie

AU - Tang, Junping

AU - Qiu, Aici

PY - 2010/4

Y1 - 2010/4

N2 - The structure and working principle of reversely switched dynistor(RSD) semiconductor closing switch are introduced. Design techniques of the high voltage RSD assembly are analyzed. A 12 kV RSD assembly and its trigger system have been designed and constructed, which can operate at 10~12 kV. Test results show the stable and reliable operation of this assembly. Under 12 kV, the peak amplitude of current could reach 133 kA, with 24 C charge transferred and current rising rate of 4.12 kA/μs, and the peak power switched could reach 1.6 GW.

AB - The structure and working principle of reversely switched dynistor(RSD) semiconductor closing switch are introduced. Design techniques of the high voltage RSD assembly are analyzed. A 12 kV RSD assembly and its trigger system have been designed and constructed, which can operate at 10~12 kV. Test results show the stable and reliable operation of this assembly. Under 12 kV, the peak amplitude of current could reach 133 kA, with 24 C charge transferred and current rising rate of 4.12 kA/μs, and the peak power switched could reach 1.6 GW.

KW - High coulomb

KW - High current

KW - Magnetic switch

KW - Reversely switched dynistor

KW - Solid-state switch

UR - https://www.scopus.com/pages/publications/77952770785

U2 - 10.3788/HPLPB20102204.0803

DO - 10.3788/HPLPB20102204.0803

M3 - 文章

AN - SCOPUS:77952770785

SN - 1001-4322

VL - 22

SP - 803

EP - 806

JO - Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams

JF - Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams

IS - 4

ER -

12 kV high voltage reversely switched dynistor assembly

Abstract

Keywords

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