TY - JOUR
T1 - 稀土Sm2O3对多孔Si2N2O陶瓷显微结构和性能的影响
AU - Wei, Liting
AU - Fan, Lei
AU - Wen, Jiangbo
AU - Wang, Hongjie
N1 - Publisher Copyright:
© 2018, Editorial Department of Journal of the Chinese Ceramic Society. All right reserved.
PY - 2018/6/1
Y1 - 2018/6/1
N2 - Porous Si2N2O ceramics with different porosities were fabricated using Si3N4 and SiO2 as starting materials and Sm2O3 as a sintering additive by a gas pressure sintering process under N2 atmosphere. The influences of sintering temperature and Sm2O3 content on the phase for Si2N2O ceramics were investigated. The XRD analysis shows that the increase of either sintering temperature or Sm2O3 content will facilitate the decomposition of Si2N2O into Si3N4. The content of sintering aids has an effect on the microstructure, and the morphology of Si2N2O grains varies from lamellar grains through plate-like grains to short fiber lapped plate-like grains when the sintering addictive content increases. The elongated Si2N2O crystals contribute to the high flexural strength (i.e., 220–356 MPa at room temperature). The dielectric properties are mainly affected due to the porosity. The as-sintered Si2N2O ceramics show both better mechanical properties and more excellent oxidation resistance with low dielectric constant (ε=4.1) and loss tangent (tanδ<0.005), compared to Si3N4. The weight gains of Si2N2O and Si3N4 are 0.6% and 2.1%, respectively, after oxidation at 1 400 ℃ for 10 h, indicating that the gas pressure sintered Si2N2O ceramic could be used as a promising high-temperature wave transparent material.
AB - Porous Si2N2O ceramics with different porosities were fabricated using Si3N4 and SiO2 as starting materials and Sm2O3 as a sintering additive by a gas pressure sintering process under N2 atmosphere. The influences of sintering temperature and Sm2O3 content on the phase for Si2N2O ceramics were investigated. The XRD analysis shows that the increase of either sintering temperature or Sm2O3 content will facilitate the decomposition of Si2N2O into Si3N4. The content of sintering aids has an effect on the microstructure, and the morphology of Si2N2O grains varies from lamellar grains through plate-like grains to short fiber lapped plate-like grains when the sintering addictive content increases. The elongated Si2N2O crystals contribute to the high flexural strength (i.e., 220–356 MPa at room temperature). The dielectric properties are mainly affected due to the porosity. The as-sintered Si2N2O ceramics show both better mechanical properties and more excellent oxidation resistance with low dielectric constant (ε=4.1) and loss tangent (tanδ<0.005), compared to Si3N4. The weight gains of Si2N2O and Si3N4 are 0.6% and 2.1%, respectively, after oxidation at 1 400 ℃ for 10 h, indicating that the gas pressure sintered Si2N2O ceramic could be used as a promising high-temperature wave transparent material.
KW - Dielectric properties
KW - Oxidation resistance
KW - Samarium oxide
KW - Silicon oxynitride
UR - https://www.scopus.com/pages/publications/85053887036
U2 - 10.14062/j.issn.0454-5648.2018.06.05
DO - 10.14062/j.issn.0454-5648.2018.06.05
M3 - 文章
AN - SCOPUS:85053887036
SN - 0454-5648
VL - 46
SP - 780
EP - 784
JO - Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society
JF - Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society
IS - 6
ER -