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直流输电用大功率逆阻型 IGCT 器件关键技术研究

Translated title of the contribution: Research on Key Technology of High Power Reverse-blocking IGCT Device for HVDC Transmission
  • Longlong Chen
  • , Fengying Wang
  • , Wenwen Zhang
  • , Xiaoguang Wei
  • , Guangfu Tang
  • , Zhiyuan He
  • , Xiang Cui
  • , Chong Gao
  • North China Electric Power University
  • Ltd.
  • State Grid Corporation of China

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Limited by the development of high-power turn-off devices, the current source converter (CSC) for high voltage direct current (HVDC) has not made any substantial progress. In this paper, the CSC topology based on several cascaded converters are introduced firstly, and then, a 250V/750kW HVDC simulation system is established for extracting parameters of revere blocking integrated gate commutation thyristor (RB-IGCT). After that, the key design methods and technological process for low conduction voltage drop, loss and high du/dt and di/dt are carried out. Finally, a 4500V/3000A RB-IGCT is developed, and core parameters are verified via experiments. The research shows that the developed RB-IGCT can meet the requirements of the system and is feasible for CSC.

Translated title of the contributionResearch on Key Technology of High Power Reverse-blocking IGCT Device for HVDC Transmission
Original languageChinese (Traditional)
Pages (from-to)4708-4716
Number of pages9
JournalZhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering
Volume43
Issue number12
DOIs
StatePublished - 20 Jun 2023

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