直流磁控溅射制备Zr-B-O薄膜及其热稳定性

Zr-B-O and Cu/Zr-B-O thin films with different bias voltages were prepared on Si (100) substrate by DC magnetron sputtering, and microstructure and thermal stability of the films were characterized by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the Zr-B-O film deposited with different bias voltages is amorphous, the film surface is flat, the film thickness is uniform, the film is well bonded with the substrate, and the sheet resistance of the film decreases with the increase of bias voltage. When the annealing temperature is lower than 750 ℃, the Cu/Zr-B-O thin film surface is complete and continuous, and the sheet resistance is small. After annealing at 750 ℃, the sheet resistance increases sharply due to the discontinuity of Cu film caused by serious aggregation and holes, but the diffusion of Cu and Si does not occur, indicating that amorphous Zr-B-O thin film can still effectively block the atomic diffusion.