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电子级 CF4中痕量 NF3杂质的吸附脱除

Translated title of the contribution: Removal of trace NF3 impurities from electronic grade CF4 by adsorption
  • Yu Fu
  • , Xiaoyu Li
  • , Yue Wu
  • , Chunhui Tao
  • , Ran Duan
  • , Wenxiang Zhang
  • , Heping Ma
  • Xi'an Jiaotong University

Research output: Contribution to journalArticlepeer-review

Abstract

The efficient and low-cost removal of trace NF3 impurities in the preparation of CF4 by fluorocarbon synthesis method has important application value for the development of electronic grade CF4. In this paper, a series of MOF-74 materials with high density open metal sites were prepared as adsorbents. Based on the strong interaction of active sites on NF3 inside the one-dimensional channels, the ultra-high adsorption capacity of NF3 under low partial pressure (up to 50.3mL/g at 298K and 10kPa) and excellent NF3/CF4 selectivity (the IAST selectivity of MOF-74-Mg can reach to 245.6 at 0.001 molar ratio of NF3) were achieved. The theoretical results showed that the unsaturated metal sites in the pores of MOF-74 had stronger affinity for the polar molecule NF3, and the fixed-bed breakthrough experiment further verified that the materials could capture trace NF3 in CF4 under dynamic conditions. In summary, the above results confirmed that MOFs materials with open metal sites could be served as an efficient and economical adsorbent, providing a new strategy for the separation and purification of trace NF3 impurities in CF4 prepared by fluorocarbon synthesis.

Translated title of the contributionRemoval of trace NF3 impurities from electronic grade CF4 by adsorption
Original languageChinese (Traditional)
Pages (from-to)3570-3578
Number of pages9
JournalHuagong Jinzhan/Chemical Industry and Engineering Progress
Volume44
Issue number6
DOIs
StatePublished - 25 Jun 2025

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