Abstract
Organic field-effect transistors ( OFETs) as a new type of electronic devices have attracted wide attention due to their flexibility and large scale and simple fabrication. However, OFETs are confronted with problems such as inadequate device performance and complex control methods. Researchers endeavor to solve these problems by doping. In this review, we summarize the application of doping technology in OFETs based on the related work of our group and prospect the future development.
| Translated title of the contribution | Application Progress of Doping in Organic Field-Effect Transistors |
|---|---|
| Original language | Chinese (Traditional) |
| Pages (from-to) | 977-995 |
| Number of pages | 19 |
| Journal | Chinese Journal of Applied Chemistry |
| Volume | 36 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 2019 |