Abstract
Anisotropic silicon nanocrystals (Si Ncs) in amorphous Si 1-x-y Ge x C y thin films were obtained by magnetron sputtering deposition and post-annealing process at high temperature. The microstructure and optical properties of anisotropic Si Ncs were analysed by high-resolution transmission electron microscopy, photoluminescence (PL) and UV-visible absorption. The morphology and optical properties were studied in this article, and the formation mechanism stated. The results showed that Si QDs preferentially grow along the directions with the lower strain energy, such as, <002>, <113> and <220>, forming polymorphic structures. The polymorphic characteristics affected the energy level configuration as indicated by a blue shift. There were two PL spectrums at 2.57 eV and 2.64 eV. UV-visible absorption measurements revealed an enhanced absorption in the energy range of 2.57 eV, 1.89 eV, 1.2 eV and 0.96 eV, which can be adjusted by changing R S/G . That was expected to improve the amount of light quantum yield of photovoltaic cell.
| Translated title of the contribution | Formation of Microstrain-induced Anisotropic Silicon Nanostructure and Its Optical Property |
|---|---|
| Original language | Chinese (Traditional) |
| Pages (from-to) | 3104-3109 |
| Number of pages | 6 |
| Journal | Cailiao Daobao/Materials Reports |
| Volume | 32 |
| Issue number | 9 |
| DOIs | |
| State | Published - 25 Sep 2018 |
