宽禁带半导体 X 射线探测器研究进展

High-performance semiconductor X-ray detectors prefer outstanding characteristics including low detec⁃ tion of limit，low dark current，high sensitivity，fast response time，high radiation hardness and so on. Wide-band⁃ gap semiconductors such as silicon carbide（SiC），gallium nitride（GaN），diamond，gallium oxide（Ga₂O₃），and zinc oxide（ZnO）exhibit exceptional properties，including a wide bandgap，high electron mobility，high breakdown field strength，high saturated carrier drift velocity，and large displacement energy. These characteristics enable them to demonstrate superior performance in X-ray detection，meeting the requirements for high-performance semiconduc⁃ tor X-ray detectors and making them highly promising candidates for such applications. As a result，they have emerged as promising candidates for advanced X-ray detectors. In this paper，the electrical properties，preparation technology and detection performance of SiC，GaN，diamond，Ga_2O3，ZnO X-ray detectors are introduced，and the latest research is discussed. Meanwhile，future research directions and potential applications of wide-bandgap semi⁃ conductor X-ray detectors in medical imaging，industrial detection and space exploration conduct in-deep thinking.