介质阻挡放电等离子体辅助正庚烷氧化特性研究

This study aimed to investigate the effect of dielectric barrier discharge(DBD) plasma technology on the oxidation of n-heptane. A DBD reactor was designed and constructed, and an alternating current power supply was used for excitation. The influence of voltage and equivalence ratio on n-heptane oxidation was systematically studied over a wide temperature range, and experimental data on the concentrations of oxidation species under plasma conditions were obtained. The results show that the introduction of plasma significantly decreases the ignition temperature of n-heptane oxidation and accelerates the oxidation process. As the voltage increases, the generation of high-energy electrons and active free radicals is enhanced, promoting the rapid consumption of n-heptane and efficient conversion of oxygen. The equivalence ratio influences the oxidation reaction mainly by adjusting the dilution gas concentration to stabilize the discharge and by controlling the oxygen concentration, which impactes the completeness of the reaction. Under low-temperature conditions, plasma significantly accelerates the oxidation reaction through non-thermal mechanisms, while at higher temperatures, the traditional thermal effect dominates the reaction.