一种Z."单晶肖特基结 [射线探测器及其特性研究

As traditional silicon-based radiation detectors reveal their intolerance to radiation and high temperature, a Schottky junction X-ray detector based on ZnO single crystal is proposed and realized. Its various electrical characteristics are measured and analyzed. Au electrode and Al electrode are fabricated on the front side and back side of the ZnO single crystal by RF magnetron sputtering method. The device is annealed at 400 ℃ to get a Schottky contact with Au and ZnO and ohmic contact with Al and ZnO. The results of current characteristic tests at room temperature in the dark show that the reverse current of the device is exponentially related to the reciprocal of temperature, and the current is 15 μA at a reverse bias voltage of -10 V and 100 μA at 10 V. The response of the device to X-ray is measured at a bias voltage of -10 V, and it is found that the response current increases with the increase of the ray electron beam. Higher energy resolution is achieved when the incident tube current ranges from 1-10 μA while the acceleration voltage is 30 keV. When the device is periodically illuminated at a bias voltage of -10 V, the device has a rise time and fall time of 0.04 s and 3.59 s respectively and has quick response and good reproducibility. The study results show that Au/ZnO/Al structured Schottky detector has application prospect for the X-ray detection field.