Abstract
In order to meet the needs of research on the electromagnetic damage mechanism and work protection technology of electronic equipment under high repetition frequency and fast rise time pulse, a novel dual-loop driven repetition frequency generating circuit with nanosecond rise time is designed. It bases on the principle of forward and reverse current pumping and uses the advantages of drift step recovery diode (DSRD) with fast breaking speed and high repetition frequency. Firstly, the main component parameters of the dual-loop driven pulse generating circuit are calculated, and an equivalent simulation model of the DSRD is established by PSpice. Influences of input voltage, trigger time, load, DSRD parasitic capacitance and other circuit parameters on the output pulse risetime, pulse width (half-peak width) and amplitude are analyzed, and the expected pulse output index is obtained by optimizing the circuit parameters. The designed dual-loop driven pulse generating circuit effectively improves the charging and discharging efficiency of the energy storage inductor and the working frequency of the pulse source. According to the circuit parameters designed, a nanosecond fast rise time and high repetition frequency pulse source with 1.87 ns rise time, 8.3 ns pulse width, 1 kV amplitude, and 3 MHz repetition frequency is finally developed, which provides an important experimental means and technical support for the study of electromagnetic effect and protection under the pulsed power environment.
| Translated title of the contribution | A Pulse Source with Dual-Loop Driven Nanosecond Fast Risetime and High Repetition Frequency |
|---|---|
| Original language | Chinese (Traditional) |
| Pages (from-to) | 114-122 |
| Number of pages | 9 |
| Journal | Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University |
| Volume | 55 |
| Issue number | 10 |
| DOIs | |
| State | Published - 10 Oct 2021 |
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