φ60,1000 μm Si-PIN detectors for pulsed γ flux measurement

Xiao Ping Ouyang; Zhen Fu Li; Yu Kun Huo; Xian Cai Song

doi:10.7498/aps.56.1353

φ60,1000 μm Si-PIN detectors for pulsed γ flux measurement

Xiao Ping Ouyang
, Zhen Fu Li
, Yu Kun Huo
, Xian Cai Song

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Using high-resistivity (10000-20000 Ω·cm) n-type Si wafers, we have developed φ60 PIN semiconductor detector with depletion thickness -1000 microns for low-intensity pulsed γ-ray flux measurement. For determination of thickness of the depletion depths, a recoil proton chamber with 20° scattering angle has been constructed. The detector's performance have been measured and analyzed, which indicates that the developed detector satisfactorily meets the expected specifications. Compared with the existing detectors with depletion depths of 200-300 microns, the detector has much greater 7 detecting sensitivity and suited for measuring pulsed γ-ray flux in low-intensity mixed γ/n fields.

Original language	English
Pages (from-to)	1353-1357
Number of pages	5
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	56
Issue number	3
DOIs	https://doi.org/10.7498/aps.56.1353
State	Published - Mar 2007
Externally published	Yes

Keywords

Current mode
Large area PIN detector
Semiconductor detector

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10.7498/aps.56.1353

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title = "φ60,1000 μm Si-PIN detectors for pulsed γ flux measurement",

abstract = "Using high-resistivity (10000-20000 Ω·cm) n-type Si wafers, we have developed φ60 PIN semiconductor detector with depletion thickness -1000 microns for low-intensity pulsed γ-ray flux measurement. For determination of thickness of the depletion depths, a recoil proton chamber with 20° scattering angle has been constructed. The detector's performance have been measured and analyzed, which indicates that the developed detector satisfactorily meets the expected specifications. Compared with the existing detectors with depletion depths of 200-300 microns, the detector has much greater 7 detecting sensitivity and suited for measuring pulsed γ-ray flux in low-intensity mixed γ/n fields.",

keywords = "Current mode, Large area PIN detector, Semiconductor detector",

author = "Ouyang, \{Xiao Ping\} and Li, \{Zhen Fu\} and Huo, \{Yu Kun\} and Song, \{Xian Cai\}",

year = "2007",

month = mar,

doi = "10.7498/aps.56.1353",

language = "英语",

volume = "56",

pages = "1353--1357",

journal = "Wuli Xuebao/Acta Physica Sinica",

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T1 - φ60,1000 μm Si-PIN detectors for pulsed γ flux measurement

AU - Ouyang, Xiao Ping

AU - Li, Zhen Fu

AU - Huo, Yu Kun

AU - Song, Xian Cai

PY - 2007/3

Y1 - 2007/3

N2 - Using high-resistivity (10000-20000 Ω·cm) n-type Si wafers, we have developed φ60 PIN semiconductor detector with depletion thickness -1000 microns for low-intensity pulsed γ-ray flux measurement. For determination of thickness of the depletion depths, a recoil proton chamber with 20° scattering angle has been constructed. The detector's performance have been measured and analyzed, which indicates that the developed detector satisfactorily meets the expected specifications. Compared with the existing detectors with depletion depths of 200-300 microns, the detector has much greater 7 detecting sensitivity and suited for measuring pulsed γ-ray flux in low-intensity mixed γ/n fields.

AB - Using high-resistivity (10000-20000 Ω·cm) n-type Si wafers, we have developed φ60 PIN semiconductor detector with depletion thickness -1000 microns for low-intensity pulsed γ-ray flux measurement. For determination of thickness of the depletion depths, a recoil proton chamber with 20° scattering angle has been constructed. The detector's performance have been measured and analyzed, which indicates that the developed detector satisfactorily meets the expected specifications. Compared with the existing detectors with depletion depths of 200-300 microns, the detector has much greater 7 detecting sensitivity and suited for measuring pulsed γ-ray flux in low-intensity mixed γ/n fields.

KW - Current mode

KW - Large area PIN detector

KW - Semiconductor detector

UR - https://www.scopus.com/pages/publications/34147218013

U2 - 10.7498/aps.56.1353

DO - 10.7498/aps.56.1353

M3 - 文章

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SN - 1000-3290

VL - 56

SP - 1353

EP - 1357

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 3

ER -

φ60,1000 μm Si-PIN detectors for pulsed γ flux measurement

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Keywords

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