α-MnO₂ nanorods-based memristors with nonvolatile resistive switching behavior

Low dimensional micro or nano materials, which have unique physical, chemical, and electrical properties, have recently gained attention in the preparation of nonvolatile memory device. In this work, one dimensional (1D) α-MnO₂ nanorods with diameter of ∼100 nm and length of ∼837 nm was synthesized by hydrothermal method under 160 °C for 12 h, and then it was used as the dielectric layer of memristive device. The resistive switching (RS) behavior of as-prepared memristive device with Ag/α-MnO₂/Ti sandwich structure demonstrates nonvolatile memory characteristics. The conduction mechanism of abrupt RS phenomenon can be explained by the formation and fracture of conductive filaments composed of Ag ions and oxygen vacancy. This work lays a foundation for understanding the physical mechanism of memristive system and the development of low dimensional materials-based memristive devices.